Results 21 to 30 of about 12,730 (315)
Numerical simulation and compact modeling of low voltage pentacene based OTFTs
Journal of Science: Advanced Materials and Devices, 2019 As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi +3 more
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Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
IEEE Journal of the Electron Devices Society, 2020 This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on ...
Michael R. Hontz +2 more
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Particle-Based Device Modeling
, 2020 The key concepts in standard device modeling, such as continuous carrier concentration and continuous current, are questionable when the average number of carriers is smaller than one electron or one hole.
Sima Dimitrijev, Dimitrijev, S
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IEEE Journal of the Electron Devices SocietyA method directly solving Fowler-Nordheim tunneling current equations for extracting the effective tunneling area, the barrier heights of the top and bottom electrodes and the electron tunneling effective mass in metal-insulator-metal diodes is ...
Wallace Lin, Darsen D. Lu
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A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling
Micromachines, 2020 This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method.
Wenyuan Liu +6 more
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Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology [PDF]
, 2011 Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P ...
Goiffon, Vincent +14 more
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Reliability of Miniaturized Transistors from the Perspective of Single-Defects
Micromachines, 2020 To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a ...
Michael Waltl
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IEEE Access, 2019 Equivalent circuit network simulation is widely used in modeling solar cells in three dimensions. However, the computational time and numerical instability increases dramatically when the number of circuit element increases.
Kan-Hua Lee +2 more
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Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
IEEE Open Journal of Nanotechnology, 2020 Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret).
Hyangwoo Kim +5 more
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Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
IEEE Journal of the Electron Devices Society, 2017 A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed.
Sung-Min Hong, Junsung Park
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