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Numerical simulation and compact modeling of low voltage pentacene based OTFTs
Journal of Science: Advanced Materials and Devices, 2019 As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi +3 more
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IEEE Journal of the Electron Devices SocietyA method directly solving Fowler-Nordheim tunneling current equations for extracting the effective tunneling area, the barrier heights of the top and bottom electrodes and the electron tunneling effective mass in metal-insulator-metal diodes is ...
Wallace Lin, Darsen D. Lu
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A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling
Micromachines, 2020 This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method.
Wenyuan Liu +6 more
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Novel design for noise controlled semiconductor optical amplifier [PDF]
, 2009 The use of semiconductor optical amplifiers (SOA) in optical communications networks has so far been limited due to their inherent large noise figure (NF) compared to Erbium Doped Fibre Amplifiers.
Frederic Surre +11 more
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Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
IEEE Open Journal of Nanotechnology, 2020 Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret).
Hyangwoo Kim +5 more
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Semiclassical transport in semiconductor superlattices with boundaries [PDF]
, 2004 In this thesis the electronic transport properties of semiconductor superlattices with boundaries are studied using the Boltzmann equation in relaxation time approximation.
Rieder, Bernhard
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Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
IEEE Journal of the Electron Devices Society, 2017 A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed.
Sung-Min Hong, Junsung Park
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Particle-Based Device Modeling
, 2020 The key concepts in standard device modeling, such as continuous carrier concentration and continuous current, are questionable when the average number of carriers is smaller than one electron or one hole.
Sima Dimitrijev, Dimitrijev, S
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Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion [PDF]
, 2004 Starting from the compact conversion and cyclostationary pn diode noise model presented in the companion paper, we present an extensive validation based on comparisons with physics-based numerical simulations.
Bonani, Fabrizio +2 more
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Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers
IEEE Journal of the Electron Devices Society, 2018 Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental ...
Daniel Connelly +8 more
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