Results 31 to 40 of about 3,944,515 (307)
Reliability of Miniaturized Transistors from the Perspective of Single-Defects
Micromachines, 2020 To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a ...
Michael Waltl
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Generating Predictive Models for Emerging Semiconductor Devices
IEEE Journal of the Electron Devices SocietyCircuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred.
Maximilian Reuter +7 more
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Implementation of TFET SPICE Model for Ultra-Low Power Circuit Analysis
IEEE Journal of the Electron Devices Society, 2016 We proposed a compact model for tunneling field effect transistors (TFETs), which combines BSIM4. Our proposed model for tunneling current is based on a drift-diffusion model under the gradual-channel approximation. The total charge for the drain current
Chika Tanaka +5 more
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Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
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Fundamental ResearchAdvancements in the semiconductor industry introduce novel channel materials, device structures, and integration methods, leading to intricate physics challenges when characterizing devices at circuit level.
Xufan Li +10 more
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IEEE Access, 2019 Equivalent circuit network simulation is widely used in modeling solar cells in three dimensions. However, the computational time and numerical instability increases dramatically when the number of circuit element increases.
Kan-Hua Lee +2 more
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A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms
IEEE Journal of the Electron Devices Society, 2020 We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a ...
Jordan R. Nicholls, Sima Dimitrijev
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Modular Critical Element Recycling Platform Using a Nanoporous Additively Manufactured Gyroid
Advanced Engineering Materials, EarlyView.A modular recycling platform integrates 3D‐printed nanoporous gyroid structures to enable efficient critical element recovery. This system utilizes a hierarchical architecture, combining macroscopic channels with polymerization‐induced nanoscale porosity. By systematically tuning structural wall thickness and resin formulation, the platform achieves an
Xiangyu Gao +6 more
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Symmetry‐Guided Multifunctional Acoustic System Based on Mechanically Actuated Sonic Crystals
Advanced Engineering Materials, EarlyView.This study presents the design, simulation, and experimental validation of amultifunctional acoustic metamaterial based on rotationally engineered sonic crystals.By tuning cylinder orientations, controllable band gaps and six distinct functionalities—including switching, topological insulation, beam splitting, and logic operations—areachieved ...
Yuanyan Zhao +2 more
wiley +1 more source
Design E–k diagram in semiconductors for stable FETs operation [PDF]
AIP AdvancesIn the current study, we report on the modeling and design of the GaxAl1−xAs semiconductor material to help improve the stable operation of RF amplifiers.
S. Mil’shtein, P. Ersland
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