Results 31 to 40 of about 12,730 (315)
Generating Predictive Models for Emerging Semiconductor Devices
IEEE Journal of the Electron Devices SocietyCircuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred.
Maximilian Reuter +7 more
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Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers
IEEE Journal of the Electron Devices Society, 2018 Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental ...
Daniel Connelly +8 more
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A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms
IEEE Journal of the Electron Devices Society, 2020 We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a ...
Jordan R. Nicholls, Sima Dimitrijev
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Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
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Fundamental ResearchAdvancements in the semiconductor industry introduce novel channel materials, device structures, and integration methods, leading to intricate physics challenges when characterizing devices at circuit level.
Xufan Li +10 more
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Implementation of TFET SPICE Model for Ultra-Low Power Circuit Analysis
IEEE Journal of the Electron Devices Society, 2016 We proposed a compact model for tunneling field effect transistors (TFETs), which combines BSIM4. Our proposed model for tunneling current is based on a drift-diffusion model under the gradual-channel approximation. The total charge for the drain current
Chika Tanaka +5 more
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Advanced Engineering Materials, EarlyView.This study presents a reversible temperature sensor with high switching ratio, ∼103. The device is fabricated using PET‐ITO and carbon nanotube dispersions in alkane. Considering its application in cold chain logistics, a proof‐of‐concept with LED is showcased. Thus, a temperature drop below the threshold temperature (crystallization temperature of the
Sunil Kumar Behera +8 more
wiley +1 more source
Design E–k diagram in semiconductors for stable FETs operation [PDF]
AIP AdvancesIn the current study, we report on the modeling and design of the GaxAl1−xAs semiconductor material to help improve the stable operation of RF amplifiers.
S. Mil’shtein, P. Ersland
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IEEE Journal of the Electron Devices Society, 2020 This Special Issue is dedicated to recent research in the field of compact modelling for circuit design. The topics included all device structures, provided it was demonstrated thet the presented compact modelling solutions were implementable in circuit ...
Benjamin Iniguez +3 more
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Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology
Advanced Engineering Materials, EarlyView.We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham +7 more
wiley +1 more source