Results 51 to 60 of about 3,944,515 (307)
Source/Drain Doping Effects and Performance Analysis of Ballistic III-V n-MOSFETs
IEEE Journal of the Electron Devices Society, 2015 Effects of source/drain (S/D) doping density (NSD) on the ballistic performance of III-V nanowire (NW) n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) are explored through atomistic quantum transport simulation.
Raseong Kim, Uygar E. Avci, Ian A. Young
doaj +1 more source
Parameter Extraction for the PSPHV LDMOS Transistor Model
IEEE Journal of the Electron Devices Society, 2020 This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating.
Kejun Xia +2 more
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Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
, 2005 We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode.
Chong, Lit Ho +2 more
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Advanced Functional Materials, EarlyView.ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti +16 more
wiley +1 more source
Estimation of Semiconductor Switching Losses under Hard Switching using Matlab/Simulink Subsystem
Electrical, Control and Communication Engineering, 2013 The conventional tools for the system level simulation of the switch-mode power converters (for example, MATLAB/SIMILINK) allow simulating the behavior of a power converter jointly operating with the control system in a closed automatic regulation system.
Volodymyr Ivakhno +2 more
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CAD software for semiconductor device modeling [PDF]
, 2004 Semiconductor device modeling is concerns with understanding and modeling the behaviour of semiconductor device. Its research area spans from new device model development to building Computer-Aided-Design (CAD) software that implements the model in ...
Othman, Yasmin
core
The combined viscous semi-classical limit for a quantum hydrodynamic system with barrier potential [PDF]
, 2014 We investigate the viscous model of quantum hydrodynamics, which describes the charge transport in a certain semiconductor. Quantum mechanical effects lead to third order derivatives, turning the stationary system into an elliptic system of mixed order ...
Dreher, Michael, Schnur, Johannes
core +1 more source
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source