Results 71 to 80 of about 3,944,515 (307)
IEEE Journal of the Electron Devices Society, 2018 Ion-selective field effect transistors (ISFETs) exhibit instability, commonly known as drift, in the form of a slow, monotonic, temporal increase in the threshold voltage of the device.
Ali Elyasi +2 more
doaj +1 more source
Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes
Advanced Functional Materials, EarlyView.We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar +13 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
Recent research progress of SiC superjunction devices
机车电传动, 2023 Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping +4 more
doaj
IEEE Journal of the Electron Devices Society, 2015 This paper describes the potential of tunable strain in field-effect transistors to boost performance of digital logic. Voltage-controlled strain can be imposed on a semiconductor body by the integration of a piezoelectric material improving transistor ...
Raymond J. E. Hueting +4 more
doaj +1 more source
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation [PDF]
, 2004 Starting from the well known low-injection approximation, a closed form, analytical compact model is derived for the small-signal (SS) and forced quasi-periodic operation of junction diodes. The model determines the small-signal and conversion admittance
Bonani, Fabrizio +2 more
core +1 more source
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
Advanced Functional Materials, EarlyView.An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS
Iranian Journal of Electrical and Electronic Engineering, 2008 During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential ...
Gh. R. Karimi, and S. Mirzakuchaki
doaj
Advanced Functional Materials, EarlyView.The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah +7 more
wiley +1 more source
iScienceSummary: Spatially resolved sensing devices for electrostatic potentials are extremely useful for characterization of living cells, however, many current techniques lack the speed necessary to capture spatially resolved, functional information of cells ...
Jon Gorecki, Steffi Krause
doaj +1 more source