Results 81 to 90 of about 3,944,515 (307)

Intelligent Manufacturing: TCAD-Assisted Adaptive Weighting Neural Networks

IEEE Access, 2018
Using machine intelligence on device and process performance prediction is an emerging methodology in the IC industry. While semiconductor technology computer-aided design (TCAD) has been researched and developed for over 30 years, it should contribute ...
Chien Y. Huang, Sze M. Fu, Parag Parashar, Chun H. Chen, Chandni Akbar, Albert S. Lin   +5 more
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Semiconductor Processes and Devices Modeling

, 2010
The advancement of knowledge in the electronic design is strongly influenced by Technology Computer Aided Design–TCAD. Here is an interesting positive feedback, because the computing power helps the designers to perform modelling, simulation, optimisation and design of the new devices with improved performance, which have the capability to increase the
openaire   +2 more sources

Multi-dimensional modeling and simulation of semiconductor nanophotonic devices [PDF]

, 2019
Self-consistent modeling and multi-dimensional simulation of semiconductor nanophotonic devices is an important tool in the development of future integrated light sources and quantum devices.
Bandelow, Uwe, Uwe Bandelow, Alexander Mielke, Schmidt, Frank, Sven Burger, Thomas Koprucki, Höhne, Theresa, Koprucki, Thomas, Wünsche, Hans-Jürgen, Frank Schmidt, Markus Kantner, Burger, Sven, Hans-Jürgen Wünsche, Mielke, Alexander, Theresa Höhne, Kantner, Markus   +15 more
core   +1 more source

Bio‐Derived Polyelectrolyte Additive–Induced Interfacial Ion‐Diffusion Barriers for Nonvolatile Organic Artificial Synapses

Advanced Functional Materials, EarlyView.
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han, Donghwa Lee, Hyeonse Kim, Hyoik Jang, Sein Chung, Geun Yeol Bae, Eunho Lee   +6 more
wiley   +1 more source

A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

IEEE Journal of the Electron Devices Society, 2019
Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction tunneling field-effect transistor (TFET).
Aryan Afzalian, Gerben Doornbos, Tzer-Min Shen, Matthias Passlack, Jeff Wu   +4 more
doaj   +1 more source

Development of a fault tolerant MOS field effect power semiconductor switching transistor [PDF]

This work describes the development of a semiconductor switch to replace an electromechanical contactor as used within the electrical power distribution system of the More Electric Aircraft (MEA; a project begun in the 1990‟s by the United States Air ...
Westmoreland, Martin
core  

A new scaling length for semiconductor-device modeling

, 1991
Through the use of an approximate solution of Poisson's equation, a new scaling length has been introduced that is appropriate to semiconductor-device modeling of surface problems or step-junction problems in regions where the fixed charges are dominant.
S. S. De, A. K. Ghosh
core   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source