Results 101 to 110 of about 3,944,515 (307)

Nonlinear active device modeling

, 2019
The chapter covers main characteristics of the devices used in power amplifiers (PAs) and provides basic knowledge about the specifications of these devices and the transistor models that are used in PA designs.
Mattias Thorsell, Angelov, Iltcho, Iltcho Angelov, Angelov, Iltcho,, Thorsell, Mattias, Thorsell, Mattias,   +5 more
core   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation

, 2004
In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias.
Swanenberg, M., Mistry, K., Redman-White, W., Benson, J., D'Halleweyn, N.V.T.   +4 more
core   +1 more source

Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering

Advanced Functional Materials, EarlyView.
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle, Valerio Piazza, Andrea Filippo, Melanie Micali, Luna Warzawa, Thomas Hagger, Kamil Wodzislawski, Julien Hurni, Valentin Biselli, Ioannis Kalogerakis, Konstantinos Rogdakis, George Viskadouros, Emmanuel Kymakis, Esther Alarcon‐Llado, Anna Fontcuberta i Morral   +14 more
wiley   +1 more source

Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS

Advanced Functional Materials, EarlyView.
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Kaito Kanahashi, Tomoaki Kameda, Katsunori Wakabayashi, Redhwan A Moqbel, Ting‐Hsuan Wu, Kung‐Hsuan Lin, Yosuke Ogawa, Eiji Nishibori, Keisuke Shinokita, Kazunari Matsuda, Jui‐Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio   +17 more
wiley   +1 more source

Direct Integration of Conductive, Emissive Perovskite Nanocrystals Into Efficient Light‐Emitting Diodes Without Post‐Synthetic Ligand Exchange

Advanced Functional Materials, EarlyView.
We demonstrate the direct integration of CsPbBr3 perovskite nanocrystals (PNCs) into optoelectronic devices without post‐synthetic ligand exchange. This is achieved by synthesizing PNCs stabilized by strong‐binding‐energy oleylammonium–bromide pairs instead of oleate ligands. The resultant low ligand density and minimized surface defects enhance charge
Jigeon Kim, Yubin Lee, Gyeong Eun Seok, Dong Gyu Lee, Seongwon Lee, Huieun Kim, Sung Woo Jang, Wooyeon Kim, Wondo Choi, Woo Hyeon Jeong, Donghun Lee, Min Jae Ko, Won Bin Im, Jinhan Cho, Tae Kyung Lee, Bo Ram Lee, Younghoon Kim   +16 more
wiley   +1 more source

Semiconductor device optimization

, 2008
s. engl. AbstractWe present two examples for optimal doping profiles in semiconductor device modeling. In the first part of this talk, we study the problem of optimal doping in the energy-transport model.
Düring, Bertram
core   +4 more sources

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Mathematical and numerical modeling of a semiconductor device

, 2002
Mathematical and numerical modeling of the function of a semiconductor device is a problem of great practical as well as strategical importance.
Segeth, Karel
core  

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

Advanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim, Ting‐Ching Chu, Zhehao Zhu, Lincoln J. Lauhon   +3 more
wiley   +1 more source