Results 101 to 110 of about 12,730 (315)

Blood Biomarkers and Surface‐Enhanced Raman Spectroscopy for Gout: A Comprehensive Review

Advanced Functional Materials, EarlyView.
Schematic illustrating gout disease progression from asymptomatic hyperuricemia to chronic tophaceous disease, highlighting the limitations of conventional imaging and biochemical diagnostics and the potential of engineered SERS platforms for ultrasensitive blood‐based detection of urate‐related biomarkers across disease stages, with the color gradient
Isuri Perera, Chiranjeevi Kanike, Appurva Tiwari, Hongyan Wu, Larry D. Unsworth, Ben Bin Xu, Xuehua Zhang   +6 more
wiley   +1 more source

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker, Haoyi Lin, Zahra Bahrami, Strahinja Marinkovic, Sung Hyun Lee, Joseph Andrews   +5 more
wiley   +1 more source

Mathematical and numerical modeling of a semiconductor device

, 2002
Mathematical and numerical modeling of the function of a semiconductor device is a problem of great practical as well as strategical importance.
Segeth, Karel
core  

Unified Analytical Framework for Understanding the Operational Stability of Blue Phosphorescent OLEDs: Quantitative Insights Into Exciton Recycling and Bimolecular Interactions

Advanced Functional Materials, EarlyView.
Blue phosphorescent OLEDs remain limited by poor operational stability. Here, a unified analytical framework integrating transient photoluminescence and magneto‐electroluminescence is developed to correlate intrinsic material photophysics with electrically driven degradation.
Hakjun Lee, Bum June Park, Taekyung Kim
wiley   +1 more source

Contact Modeling and Analysis of InAs HEMT Transistors

, 2011
Novel device concepts and better channel materials than Si are required to improve the performance of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs).
Povolotskyi, Michael, Park, Seung Hyun, M. Povolotsky, Park, Hong Hyun, Hong-Hyun Park, Park, Hong-Hyun, G. Klimeck, T. Kubis, Kubis, Tillmann, Seung Hyun Park, Steiger, Sebastian, S. Steiger, Klimeck, Gerhard, Salmani-Jelodar, Mehdi, M. Salmani-Jelodar   +14 more
core   +1 more source

Powering Nanocrystal‐Based Heat Engines With Light‐Emitting Metasurfaces That Influence Their Temperature

Advanced Functional Materials, EarlyView.
Metasurfaces and other structured photonic environments can dramatically modify the absorption and/or light emission of semiconductors. However, the consequences of these changes on the temperature of the system are not well understood. The authors address this problem for colloidal nanocrystals and leverage their findings to convert light into ...
Hugo Kowalczyk, Yihao Yuan, Augustin Caillas, Amel Saidoun, Roméo Bonnet, Pascal Filloux, Emmanuel Lhuillier, Aloyse Degiron   +7 more
wiley   +1 more source

Automatic Parameter Extraction Technique for MOS Structures by C-V Characterization Including the Effects of Interface States

Measurement Science Review, 2016
An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer Agilent B1500A.
Ryazantsev D. V., Grudtsov V. P.
doaj   +1 more source

Semiconductor Processes and Devices Modeling

, 2010
The advancement of knowledge in the electronic design is strongly influenced by Technology Computer Aided Design–TCAD. Here is an interesting positive feedback, because the computing power helps the designers to perform modelling, simulation, optimisation and design of the new devices with improved performance, which have the capability to increase the
openaire   +2 more sources

Some applications of asymptotic methods in semiconductor device modeling

, 1991
Kalachev, Leonid V.. (1991). Some applications of asymptotic methods in semiconductor device modeling.
Kalachev, Leonid V.
core  

Efficient Neural Network-Based Compact Modeling for Novel Device Structures Using a Multi-Fidelity Model and Active Learning

Neural network (NN)-based compact modeling methodologies are gaining attention due to the challenges of device complexity, narrow model coverage, and SPICE simulation speed in advanced semiconductor technology nodes.
HyunJoon Jeong, JinYoung Choi, Yohan Kim, Jeong-Taek Kong, SoYoung Kim   +4 more
core   +1 more source