Results 91 to 100 of about 3,944,515 (307)
Advanced Functional Materials, EarlyView.This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad +3 more
wiley +1 more source
IEEE Access, 2019 Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices.
Wenrui Hu +3 more
doaj +1 more source
Modeling and Characterization of Semiconductor Devices for Energy Efficiency [PDF]
, 2018 Photovoltaics is among the most important technologies aimed at producing electrical energy from renewable and sustainable energy sources, and its market demands more and more efficient and cost-effective technologies. Numerical device simulation allows understanding the link between new cell's architecture and physical structure, and the underlying ...
openaire +1 more source
Method of manufacturing a semiconductor sensor device and semiconductor sensor device
, 2009 The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and
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Advanced Functional Materials, EarlyView.Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
AIP Advances, 2017 On the basis of semiconductor-ferromagnet GaAs-Fe3Si core-shell nanowires (Nws) we compare the facilities of magnetic Nw ensemble measurements by superconducting quantum interference device magnetometry versus investigations on single Nws by magnetic ...
Maria Hilse +2 more
doaj +1 more source
, 2002 Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging.
Stake, Jan,
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Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices
Advanced Functional Materials, EarlyView.Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig +3 more
wiley +1 more source
Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2
Advanced Functional Materials, EarlyView.A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko +7 more
wiley +1 more source
Analysis of Shipley Microposit Remover 1165 and AZ P4620 Photoresist waste disposal for Company XYZ [PDF]
, 2001 Plan BCompany XYZ is a company that processes semiconductor wafers. In their process, AZ® P4620 photoresist, an organic compound, is removed by Shipley Microposit Remover 1165, an organic solvent.
Barthen, Michael L.
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