Results 61 to 70 of about 12,730 (315)

A Proposal for a New Method of Modeling of the Quantum Dot Semiconductor Optical Amplifiers [PDF]

Journal of Optoelectronical Nanostructures, 2019
With the advancement of nanoscale semiconductor technology,semiconductor optical amplifiers are used to amplify and process all-optical signals. Inthis paper, with the aim of calculating the gain of quantum dot semiconductor opticalamplifier (QD-SOA ...
farideh hakimian, Mohammad Reza Shayesteh, Mohammadreza Moslemi   +2 more
doaj  

Emergent Topological Magnons and Thermal Hall Effect in 2D Filling‐Enforced Fully Compensated Ferrimagnets

Advanced Functional Materials, EarlyView.
Schematic illustration of ferroelectric‐intercalation‐driven transitions in magnetic configurations and magnonic topological phases, together with the symmetry relations of magnonic Berry curvature. ABSTRACT Magnons in collinear magnets with vanishing net magnetization offer unique advantages for spin transport, including ultrafast dynamics and ...
Yingxi Bai, Bo Yuan, Zhenzhou Guo, Jian Zhang, Ying Dai, Baibiao Huang, Xiaotian Wang, Chengwang Niu, Gang Zhang   +8 more
wiley   +1 more source

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

IEEE Access, 2019
In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are ...
Ao Zhang, Jianjun Gao
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Counteracting Threshold-Voltage Drift in Ion-Selective Field Effect Transistors (ISFETs) Using Threshold-Setting Ion Implantation

IEEE Journal of the Electron Devices Society, 2018
Ion-selective field effect transistors (ISFETs) exhibit instability, commonly known as drift, in the form of a slow, monotonic, temporal increase in the threshold voltage of the device.
Ali Elyasi, Majid Fouladian, Shahriar Jamasb   +2 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Parallel semiconductor device simulation: from power to 'atomistic' devices [PDF]

, 1998
This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We describe the spatial domain decomposition approach adopted in
Brown, A.R., Asenov, A., Roy, S.
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Recent research progress of SiC superjunction devices

机车电传动, 2023
Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping, ZHANG Kun, CHEN Wei, WANG Jie, ZHANG Bo   +4 more
doaj