Results 61 to 70 of about 3,944,515 (307)
APL Materials, 2023 Aluminum nitride (AlN) exhibits excellent high-temperature resistance, chemical stability, and a wide bandgap, making it a prime candidate material for deep ultraviolet detectors.
Yuan Cao +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian +1 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
A Proposal for a New Method of Modeling of the Quantum Dot Semiconductor Optical Amplifiers [PDF]
Journal of Optoelectronical Nanostructures, 2019 With the advancement of nanoscale semiconductor technology,semiconductor optical amplifiers are used to amplify and process all-optical signals. Inthis paper, with the aim of calculating the gain of quantum dot semiconductor opticalamplifier (QD-SOA ...
farideh hakimian +2 more
doaj
Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors
IEEE Access, 2019 In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are ...
Ao Zhang, Jianjun Gao
doaj +1 more source
Semiconductor device with tunable energy band gap [PDF]
, 2009 The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material ...
core
Chromatic dispersion monitoring of 80-Gb/s OTDM data signal via two-photon absorption in a semiconductor microcavity [PDF]
, 2007 In this letter, a novel method of chromatic dispersion monitoring via two-photon absorption (TPA) is investigated. A specially designed semiconductor microcavity is employed as a TPA detector for monitoring data signals operating at rates up to 80Gb/s ...
Guo, Wei Hua +18 more
core +2 more sources
Advances in Sustainable and Wearable Textile Based Soft Robotics
Advanced Functional Materials, EarlyView.This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Sulfur‐doped graphitized carbon nanofibers act as adaptive catalyst–support platforms, enabling dynamic sulfur‐mediated reconstruction and strong metal–support interactions. This unique behavior enhances catalyst stability and controls reaction pathways, achieving highly selective urea oxidation (∼92% N2) coupled with efficient hydrogen evolution ...
Melanie Guillén‐Soler +4 more
wiley +1 more source