Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models [PDF]
, 1997 The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models.
Bonani, S. +10 more
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A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior [PDF]
, 1998 The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action.
Baric, Adrijan, McNally, Patrick J.
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Large-signal device simulation in time- and frequency-domain: a comparison [PDF]
, 2008 The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio +7 more
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Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
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When self-consistency makes a difference [PDF]
, 2008 Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio +5 more
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A Physical Model for the Hysteresis in MoS2 Transistors
IEEE Journal of the Electron Devices Society, 2018 Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled.
Theresia Knobloch +8 more
doaj +1 more source
New approach to power semiconductor devices modeling
Journal of Telecommunications and Information Technology, 2004 The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are
Andrzej Napieralski +1 more
doaj +1 more source
Novel design for noise controlled semiconductor optical amplifier [PDF]
, 2009 The use of semiconductor optical amplifiers (SOA) in optical communications networks has so far been limited due to their inherent large noise figure (NF) compared to Erbium Doped Fibre Amplifiers.
Frederic Surre +11 more
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Evaluating Stresses in SiO2 Thin Films Using Molecular Dynamics Simulations
Engineering Proceedings, 2023 Semiconductor electronics is transforming computing, communication, energy harvesting, automobiles, biotechnology, and other electronic device landscapes.
Sachin Shendokar +3 more
doaj +1 more source
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion [PDF]
, 2004 Starting from the compact conversion and cyclostationary pn diode noise model presented in the companion paper, we present an extensive validation based on comparisons with physics-based numerical simulations.
Bonani, Fabrizio +2 more
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