Results 11 to 20 of about 3,944,515 (307)
The Quantum Hydrodynamic Model for Semiconductor Devices [PDF]
SIAM Journal on Applied Mathematics, 1994 The article under review deals with the quantum hydrodynamic (QHD) equations for the charge transport simulation in quantum semiconductor devices. It is well-known that the behaviour of quantum fluid near thermal equilibrium and in the high temperature limit can be approximated by adding \({\mathcal O} (\hbar^ 2)\) terms to the classical fluid ...
openaire +2 more sources
Large-signal device simulation in time- and frequency-domain: a comparison [PDF]
, 2008 The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio +7 more
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Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
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IEEE Journal of the Electron Devices Society, 2020 Comprehensive channel material benchmarking for n- and pMOS are performed considering effects of quantum transport and carrier scattering. Various channel material options (Si, InAs, In0.7Ga0.3As, In0.53Ga0.47As, GaAs, and Ge for nMOS, Si and Ge for pMOS)
Raseong Kim, Uygar E. Avci, Ian A. Young
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Charge noise and spin noise in a semiconductor quantum device [PDF]
, 2014 Self-assembled quantum dots are very attractive as the building blocks for quantum light sources and spin qubits. For instance, a single quantum dot is a robust, fast, narrow-linewidth source of single photons, features not shared by any other ...
Kuhlmann, Andreas V.
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A Physical Model for the Hysteresis in MoS2 Transistors
IEEE Journal of the Electron Devices Society, 2018 Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled.
Theresia Knobloch +8 more
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When self-consistency makes a difference [PDF]
, 2008 Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio +5 more
core +1 more source
New approach to power semiconductor devices modeling
Journal of Telecommunications and Information Technology, 2004 The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are
Andrzej Napieralski +1 more
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Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
IEEE Journal of the Electron Devices Society, 2020 This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on ...
Michael R. Hontz +2 more
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Evaluating Stresses in SiO2 Thin Films Using Molecular Dynamics Simulations
Engineering Proceedings, 2023 Semiconductor electronics is transforming computing, communication, energy harvesting, automobiles, biotechnology, and other electronic device landscapes.
Sachin Shendokar +3 more
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