Results 181 to 190 of about 479,800 (295)

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

open access: yesAdvanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim   +7 more
wiley   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

open access: yesAdvanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Water‐Stable Paper‐Based Laser‐Induced Graphene With Asymmetric Water Adhesion and Wettability

open access: yesAdvanced Materials Interfaces, EarlyView.
Paper‐based electronics are attractive for sustainable and disposable devices, but often fail in wet environments. By introducing Parafilm into cellulose paper combined with laser conversion, two graphene surfaces with different water interactions are created.
Lingyin Meng   +3 more
wiley   +1 more source

Electronic Structure Modulation Induced by Asymmetric Cu─Ni Centers in a π‐Conjugated Triazine MOF

open access: yesAdvanced Materials Interfaces, EarlyView.
A π‐conjugated H3TATB‐based asymmetric bimetallic CuNi‐MOF was developed as an efficient electrocatalyst for alkaline hydrogen evolution. Benefiting from synergistic Cu–Ni interactions, enhanced charge transfer, and stabilized active sites, CuNi‐MOF delivers superior HER performance with low overpotential, improved kinetics, and 24 h durability.
Alamgir   +7 more
wiley   +1 more source

Passivated SiC Surfaces for Photonic and Quantum Applications: Balancing Chemical Stability and Surface Luminescence

open access: yesAdvanced Materials Interfaces, EarlyView.
Low‐temperature passivation of SiC reveals that optical surface quality and chemical stability are not directly correlated. Ar plasma‐treated and SiNx‐passivated surfaces yield the lowest photoluminescence background, whereas CF4 plasma and ALD‐grown dielectrics introduce higher emission.
Marina Scharin‐Mehlmann   +4 more
wiley   +1 more source

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