Results 231 to 240 of about 112,114 (290)

Wafer‐Scale Bi2O2Se‐on‐Insulator Thin Films for Integrated Electronics

open access: yesAdvanced Electronic Materials, EarlyView.
Wafer‐scale, thickness‐controlled semiconducting Bi2O2Se thin films were grown on 2‐inch insulating sapphire substrates via magnetron sputtering using quasi‐van der Waals epitaxy. The uniform films enable large‐scale fabrication of top‐gated TFT arrays with stable enhancement‐mode operation and functional inverter, NAND, and NOR logic gates.
Xi Chen   +4 more
wiley   +1 more source

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT The transport properties and electrical bandgap of nominally undoped ≈$\approx$75‐nm‐thick CrN layers simultaneously grown on AlN(0001) and AlN(112¯$\bar{2}$2) templates using plasma‐assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(112¯$\bar{2}$2) exhibit (111) and (113) surface orientations, respectively.
Duc V. Dinh   +3 more
wiley   +1 more source

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