Results 171 to 180 of about 5,488,017 (310)

Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6

open access: yesAdvanced Functional Materials, EarlyView.
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl   +20 more
wiley   +1 more source

Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites

open access: yesAdvanced Functional Materials, EarlyView.
Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles   +16 more
wiley   +1 more source

An outlier mining algorithm based on constrained concept lattice

open access: yesInternational Journal of Systems Science, 2014
Jifu Zhang   +3 more
semanticscholar   +1 more source

Copper‐Based Crystalline‐Metallic Glass Composite Thin Films: A Novel Material with Enhanced Strength and Thermally Stable Nanotwins

open access: yesAdvanced Functional Materials, EarlyView.
A Cu‐based crystal‐glass composite with high‐density twins is identified by a fast screening technique using combinatorial sputtering together with XRD and nanoindentation mapping. This bamboo‐like structure demonstrates homogenous plastic flow and retains high strength during in situ high temperature tests, up to 1 GPa at 550°C, owing to those ...
Chunhua Tian   +10 more
wiley   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

open access: yesAdvanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda   +11 more
wiley   +1 more source

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