Results 11 to 20 of about 75,857 (119)
Generalized Einstein relation for nonparabolic multiple energy-band degenerate semiconductors
AIP Advances, 2019 A generalized Einstein relation for electron gases of degenerate semiconductors with a system of typically two nonparabolic conduction band structures is derived and formulated in near-equilibrium condition based on using the semiclassical drift ...
Jang Jyegal
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Road Map of Semiconductor Metal-Oxide-Based Sensors: A Review
Sensors, 2023 Identifying disease biomarkers and detecting hazardous, explosive, flammable, and polluting gases and chemicals with extremely sensitive and selective sensor devices remains a challenging and time-consuming research challenge.
Taposhree Dutta +3 more
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Analytical Study of near Mobility Edge Density of States of Hydrogenated Amorphous Silicon
مجلة بغداد للعلوم, 2014 Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method.
Baghdad Science Journal
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Carrier distribution in multi-band materials and its effect on thermoelectric properties
Journal of Materiomics, 2016 Band convergence is one of the most interesting topics in recent studies of thermoelectrics. However, its effect on thermoelectric properties is only simply stated as improving band degeneracy.
Jun Mao, Weishu Liu, Zhifeng Ren
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The band energy structure of RbKSO4 crystals
Condensed Matter Physics, 2007 The energy band structure of mechanically free and compressed RbKSO4 single crystals is investigated. It is established that the top of the valence band is located at the D point of the Brillouin zone [k = (0.5, 0.5, 0)], the bottom of the conduction ...
O.V.Bovgyra +4 more
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Cell Reports Physical Science, 2020 Summary: Ferroelectric domain wall (DW) conduction, confirmed in recent experiments, has attracted intense attention due to its promising applications in optoelectronic devices.
Chong-Xin Qian +6 more
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Nanoscale Research Letters, 2019 The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce
Shun-Ming Sun +4 more
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New Journal of Physics, 2022 Second harmonic generation efficiency (SHGE) strongly depends on the length of the interaction material along the beam propagation axis. Since a nanoscale interaction length is considered too short even in the optical wavelength scale, the attained SHGE ...
Özüm Emre Aşırım, Mustafa Kuzuoglu
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Moderator band calcification masquerading infrahisian conduction system disease
Journal of Clinical and Preventive Cardiology, 2022 Relationship between moderator band (MB) calcification and infrahisian conduction system disease has not been described in the world literature so far.
Debasish Das +4 more
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Science and Technology of Advanced Materials, 2013 Core-level and valence band spectra of InxGa1−xN films were measured using hard x-ray photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films.
Mickael Lozac'h, Shigenori Ueda, Shitao Liu, Hideki Yoshikawa, Sang Liwen, Xinqiang Wang, Bo Shen, Kazuaki Sakoda, Keisuke Kobayashi and Masatomo Sumiya
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