Results 21 to 30 of about 75,857 (119)

The Importance of Avoided Crossings in Understanding High Valley Degeneracy in Half‐Heusler Thermoelectric Semiconductors

open access: yesAdvanced Electronic Materials, 2022
Half‐Heusler (hH) compounds are promising candidates for inexpensive, low‐toxicity thermoelectric materials. It is well known that engineering electronic bands with high valley degeneracy is an effective approach for enhancing the performance of ...
Madison K. Brod   +2 more
doaj   +1 more source

Theory of Linear-Circular Dichroism in Monoatomic Layers of Transition Metal Dichalcogenides Taking into Account the Rabi Effect

open access: yesEast European Journal of Physics
We have developed a theory of dimensional quantization for nanostructures, both one-dimensional and zero-dimensional, constructed from monoatomic layers of transition metal dichalcogenides (TMDCs). This theory has enabled us to derive expressions for the
Rustam Y. Rasulov   +4 more
doaj   +1 more source

Research of energy structure of crystalline compounds in Ag(Tl)-As(Р)-S(Se) systems

open access: yesФізика і хімія твердого тіла
The paper presents the results of studying the peculiarities of formation of the valence band and the conduction band of crystalline compounds in Ag(Tl)-As(P)-S(Se) systems with sp3-type bond by using the photoelectron spectroscopy method.
O.O. Spesyvykh   +5 more
doaj   +1 more source

Study of the electrical and optical properties of Ge27Se58Pb15 chalcogenide glass

open access: yesJournal of Asian Ceramic Societies, 2018
The present article reports electrical and optical properties of Ge27Se58Pb15 chalcogenide glass prepared through melt quenching technique. The dc electrical conductivity has been studied as a function of temperature and activation energy of conduction ...
Deepika   +3 more
doaj   +1 more source

Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain

open access: yesIEEE Journal of the Electron Devices Society, 2015
In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj   +1 more source

Author Correction: Limitation of Fermi level shifts by polaron defect states in hematite photoelectrodes

open access: yesNature Communications, 2018
The original version of this Article contained an error in Fig. 2b in which the bottom of the pink-shaded conduction band region was incorrectly positioned at a value of 1.75 eV. The correct conduction band minimum has a value of 2.2 eV.
Christian Lohaus   +2 more
doaj   +1 more source

Crystal growth and flat-band effects on thermoelectric properties of Fe2TiAl-based full-Heusler thin films

open access: yesAIP Advances, 2020
In this study, various Fe-based thermoelectric full-Heusler thin films were fabricated on MgO substrates by a post-annealing process. It is clarified that crystal growth through the post-annealing process is prevented by both an initial crystallization ...
Y. Kurosaki   +4 more
doaj   +1 more source

Role of band alignment at the transparent front contact/emitter interface in the performance of wide bandgap thin film solar cells

open access: yesAPL Materials, 2018
Recent numerical modeling and experimental work have shown that appropriate conduction band alignment at the emitter/absorber interface is critically important for high efficiency CdTe solar cells.
Geethika K. Liyanage   +2 more
doaj   +1 more source

Influence of Mixing Valence Band States to the Conduction Band States on Two-Quantum Linear-Circular Dicroism in Semiconductors

open access: yesEast European Journal of Physics
A quantitative theory of two-photon linear-circular dichroism caused between the subbands of light and heavy holes of the valence band and conduction band is constructed, which takes into account the admixture of valence band states to the conduction ...
Rustam Y. Rasulov   +4 more
doaj   +1 more source

Ab-initio study of hydrogen doping and oxygen vacancy at anatase TiO2 surface

open access: yesAIP Advances, 2014
Density functional–pseudopotential calculations were performed to study the effects of hydrogen doping and oxygen vacancy, both individually and together, on the electronic structure and stability of (001) surface of TiO2 in the anatase phase.
M. Sotoudeh   +3 more
doaj   +1 more source

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