Results 251 to 260 of about 2,929,802 (304)
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Russian Engineering Research, 2020
Contact in the honing of cylindrical holes is simulated. Nonlinear behavior of the mean contact pressure and the transfer coefficient is observed. These factors depend on the applied force and the surface relief, as well as the materials used in the tool and workpiece.
K. R. Muratov +2 more
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Contact in the honing of cylindrical holes is simulated. Nonlinear behavior of the mean contact pressure and the transfer coefficient is observed. These factors depend on the applied force and the surface relief, as well as the materials used in the tool and workpiece.
K. R. Muratov +2 more
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Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology, 1996
This paper reintroduces an alternative plasticity index where σm is the r.m.s. profile slope.
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This paper reintroduces an alternative plasticity index where σm is the r.m.s. profile slope.
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Distribution of contact pressure in wheel–rail contact area
Wear, 2002Abstract The authors have recently assessed the feasibility of applying an ultrasonic technique for investigating contact problems between the wheel and rail. In particular, the size and shape of the contact area have been determined, obtaining good agreement between the experimental data and Hertz’s theory.
PAU, MASSIMILIANO +2 more
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IEE Colloquium Recent Advances in Power Devices, 1999
Some of the design considerations for the implementation of a bondless, pressure contacted IGBT are outlined. Whilst the electrical performance of each type of device is similar, some differences in the mechanical and thermal properties of pressure contacted devices to those exhibited by substrate mounted devices are highlighted.
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Some of the design considerations for the implementation of a bondless, pressure contacted IGBT are outlined. Whilst the electrical performance of each type of device is similar, some differences in the mechanical and thermal properties of pressure contacted devices to those exhibited by substrate mounted devices are highlighted.
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Pressure Contact Semiconductor Devices
IEEE Transactions on Industry and General Applications, 1966The pressure contact semiconductor device features a subassembly consisting of a silicon pellet and two attached tungsten backup plates contained in a disk-shaped ceramic insulated housing, but not soldered down to either top or bottom contacts in the housing. The devices discussed in the paper are two SCRs rated at 230 amperes average, 1300 volts, and
William Warburton +2 more
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Finger joint contact areas and pressures
Journal of Orthopaedic Research, 1985AbstractAlthough the joints of the index finger are similar geometrically and kinematically, the occurrence of degenerative joint disease is more frequent and severe in the distal interphalangeal joint. Much circumstantial evidence exists to suggest a mechanical cause for the observed differences in frequency.
J M, Moran, J H, Hemann, A S, Greenwald
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Pressure Dependence of the Contact Angle
The Journal of Physical Chemistry B, 2007When a liquid and its vapor contact a smooth, homogeneous surface, Gibbsian thermodynamics indicates that the contact angle depends on the pressure at the three-phase line of an isothermal system. When a recently proposed adsorption isotherm for a solid-vapor interface is combined with the equilibrium conditions and the system is assumed to be in a ...
Jiyu, Wu, T, Farouk, C A, Ward
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Effects of pressure on contact dermatitis
American Journal of Industrial Medicine, 1985AbstractIn human volunteers, firm pressure was applied to deformable plastic chambers containing (1) chemical irritants, (2) glass fibers, and (3) selected allergens to which the subjects were sensitive.Pressure variably intensified irritant dermatitis and strikingly enhanced fiberglass dermatitis. Pressure did not influence allergic contact dermatitis.
R, Gollhausen, A M, Kligman
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Measuring contact pressure distributions under elastohydrodynamic point contacts
Tribotest, 1994AbstractCircular point contact EHD pressure distributions were investigated under various operating conditions using a thin film piezo‐resistive pressure transducer. A series of controlled experiments, in which the active element of the transducer is positioned at various contact cross‐sections, was carried out.
P. M. Johns‐Rahnejat, R. Gohar
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Contact Pressure and Stress Distribution
1995A foundation is the interface between a structural load and the ground. The stress q applied by a structure to a foundation is often assumed to be uniform. The actual pressure then applied by the foundation to the soil is a reaction, called the contact pressure p and its distribution beneath the foundation may be far from uniform.
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