Results 1 to 10 of about 4,440,599 (246)
MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation [PDF]
Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices.
Geun Yeol Bae +4 more
doaj +2 more sources
Realization of a Test Tool for Diagnosis of Contact Resistance and Measurement of Selected Types of Conductive Materials [PDF]
Contact connections in electrical machines and apparatus are important elements in the whole power supply network and a high level of reliability is expected there.
Petr Kacor +3 more
doaj +2 more sources
The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes [PDF]
The successful commercialization of organic field‐effect transistors (OFETs) for advanced integrated organic electronics requires reducing device sizes, which inevitably clashes with the constraints imposed by the contact effects.
Ming Chen +4 more
doaj +2 more sources
Baseline and seasonal trends of Bacillus cereus and Bacillus subtilis from clinical samples in Japan
Summary: Background: Outbreaks of Bacillus cereus bloodstream infections (BSIs) are a concern in Japanese medical settings. Aim: This study determined baseline values for B.
Ayako Kobayashi +3 more
doaj +1 more source
As the foremost component of wearable devices, flexible pressure sensors require high sensitivity, wide operating ranges, and great stability. In this paper, a pressure sensor comprising a regular batten microstructure active layer is presented.
Xuefeng Zhang, Sheng Chang, Zhixue Tong
doaj +1 more source
Electrical Contact Resistance of Contact Bodies With Cambered Surface
The electrical contact resistance of cambered surface contact is systematically studied by analytical solution and finite-element simulation. Two representative cambered surface contacts, namely sphere-plane contact and cylinder-plane contact are built ...
Wanbin Ren, Chao Zhang, Xilai Sun
doaj +1 more source
Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS2 Transistors
As an atomically thin semiconductor, 2D molybdenum disulfide (MoS2) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics.
Qingguo Gao +10 more
doaj +1 more source
Straining of sheet metal leads to surface roughness changes. In this study, foils of AISI 201 and AISI 304 stainless steel were strained in uniaxial tension to impose roughening of their surfaces.
Úlfar Arinbjarnar +5 more
doaj +1 more source
Design Guideline for a Cantilever-Type MEMS Switch with High Contact Force
Micromechanical switches are of significant interest for advanced radio frequency and microwave systems, but their practical implementation is limited by low reliability.
Ilia V. Uvarov, Igor A. Belozerov
doaj +1 more source
Purpose. To determine the contribution of the real contact spots distribution in the total conductivity of the conductors contact. Methodology. The electrical contact resistance research was carried out on models.
S. V. LOSKUTOV +2 more
doaj +1 more source

