Results 21 to 30 of about 4,440,599 (246)

Resistance contact thin-film resistor [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008
The analytical model of the calculation of the contact resistance of the thin-film resistor is Offered. The Explored dependency of the contact resistance from wedge of the pickling.
Spirin V. G.
doaj  

The Secret Ingredient for Exceptional Contact‐Controlled Transistors

open access: yesAdvanced Electronic Materials, 2022
Contact‐controlled transistors are rapidly gaining popularity. However, simply using a rectifying source contact often leads to unsatisfactory operation, merely as a thin‐film transistor with low drain current and reduced effective mobility.
Eva Bestelink   +4 more
doaj   +1 more source

Single- and Double-Sided Coated Gas Diffusion Layers Used in Polymer Electrolyte Fuel Cells: A Numerical Study

open access: yesEnergies, 2023
A new three-dimensional numerical model of a polymer electrolyte fuel cell (PEFC) with a single straight channel was developed to primarily investigate the important impact of the double-sided microporous layer (MPL) coating on the overall performance of
Isaac C. Okereke   +5 more
doaj   +1 more source

An asperity-based finite element model for electrical contact of microswitches [PDF]

open access: yes, 2013
Precise prediction of electrical contact resistance is important for microswitches. The contact spot used to beconsidered as a circle in earlier literature, where there was only one geometrical parameter: the radius of the a-spots.
Colin, Stephane   +7 more
core   +1 more source

A Cost-Effective Solution to Improving the Electrical Performance of Metal Contacting Interfaces in IC System under Temperature-Humidity Environment

open access: yesApplied Sciences, 2019
Temperature-humidity (TH) induced failure mechanism (FM) of metal contacting interfaces in integrated circuit (IC) systems has played a significant role in system reliability issues.
Yupeng Li   +6 more
doaj   +1 more source

Improving the contact resistance at low force using gold coated carbon nanotube surfaces [PDF]

open access: yes, 2010
Investigations to determine the electrical contact performance under repeated cycles at low force conditions for carbon-nanotube (CNT) coated surfaces were performed. The surfaces under investigation consisted of multi-walled CNT synthesized on a silicon
S. M. Spearing   +8 more
core   +1 more source

Mechanical characterisation and modelling of resistance welding [PDF]

open access: yes, 2011
Resistance welding is used very extensively in industry for a wide range of applications. Knowledge and measurement of the dynamic characteristics of resistance welding equipment is important in the design of the equipment and in optimization of ...
Van Rymenant, Patrick
core   +7 more sources

Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts

open access: yesNanomaterials, 2016
Low contact resistance between graphene and metals is of paramount importance to fabricate high performance graphene-based devices. In this paper, the impact of both defects induced by helium ion (He+) bombardment and annealing on the contact resistance ...
Kunpeng Jia   +6 more
doaj   +1 more source

Effect of Fe Content on the Contact Resistance of Electroplated Au-Fe Alloy Layers [PDF]

open access: yesArchives of Metallurgy and Materials, 2018
In this study, variations in the contact resistance of electroplated Au-Fe alloy layers with Fe content were investigated. The contact resistance of electroplated Au-Fe alloy layers that were subject to thermal aging at 260°C in the atmosphere, tended to
H.-S. Park, I. Son
doaj   +1 more source

Finite element based surface roughness study for ohmic contact of microswitches [PDF]

open access: yes, 2012
Finite element method (FEM) is used to model ohmic contact in microswitches. A determinist approach is adopted, including atomic force microscope (AFM) scanning real contact surfaces and generating rough surfaces with three-dimensional mesh.
Colin, Stephane   +12 more
core   +1 more source

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