Results 121 to 130 of about 206,060 (260)

Impact of Hydrogen Incorporation on Electronic and Magnetic Structure of X2CrNi18‐9 Stainless Steel

open access: yesAdvanced Engineering Materials, EarlyView.
Hydrogen uptake in austenitic stainless steel alters both its electronic and magnetic structure. Seebeck measurements reveal hydrogen‐induced shifts in the electronic density of states, while neutron scattering uncovers nanoscale inhomogeneities that grow upon hydrogen incorporation, with the most pronounced effect observed in the PBF as‐built state ...
Torben Tappe   +9 more
wiley   +1 more source

Influence of Particle Shape and Size in Copper‐Based Low‐Temperature Metallization Paste for Solar Cells

open access: yesAdvanced Engineering Materials, EarlyView.
Particle morphology controls the balance between printability and electrical connectivity in low‐temperature AgCu/Ag metallization pastes. Flake‐shaped AgCu particles form extended low‐resistance contacts, whereas spherical particles favor processability at high metal loading. Fine Ag particles further tune void filling and conductive‐network formation
O. Mhirsi   +3 more
wiley   +1 more source

Investigation of Resonance Characteristics of More Than 10 000 Metal‐Coated Silicon MEMS Cantilevers Using Machine Learning

open access: yesAdvanced Engineering Materials, EarlyView.
More than 10 000 metal‐coated silicon MEMS cantilevers are fabricated and characterized to build a large‐scale experimental dataset spanning multiple vibrational modes. Machine learning algorithms are benchmarked to predict resonance frequency and quality factor, with ensemble based models achieving accuracy approaching experimental uncertainty.
Sina Zare Pakzad   +8 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

High-pressure-resistant totally implantable venous power ports for improving image quality in contrast-enhanced computed tomography. [PDF]

open access: yesQuant Imaging Med Surg
Deng H   +10 more
europepmc   +1 more source

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