Results 141 to 150 of about 57,417 (243)

Using a Zero‐Strain Reference Electrode to Distinguish Anode and Cathode Volume Changes in a Solid‐State Battery

open access: yesAdvanced Materials Interfaces, EarlyView.
Volume changes of a solid‐state battery cell are separated into the individual contributions of anode and cathode. Simultaneously determining the “reaction volumes” of both electrodes requires a reference electrode with a pressure‐independent potential.
Mervyn Soans   +5 more
wiley   +1 more source

Tailor‐Made Protective LixAlSy Layer for Lithium Anodes to Enhance the Stability of Solid‐State Lithium–Sulfur Batteries

open access: yesAdvanced Materials Interfaces, EarlyView.
An intentionally added, chemically formed LixAlSy coating stabilizes the lithium–electrolyte interface in solid‐state Li–S batteries. The layer suppresses side reactions, preserves smooth charge transfer, and improves ion transport from the start. This approach offers a practical route to more durable solid‐state batteries and a clearer understanding ...
Xinyi Wang   +4 more
wiley   +1 more source

CPP–PEG‐Guided Surface Engineering of Mitochondria Enables Efficient Cellular Uptake and Respiratory Modulation

open access: yesAdvanced Materials Interfaces, EarlyView.
PEG‐guided mitochondrial surface engineering supports structural stabilization and controlled presentation of cell‐penetrating peptides. CPP–PEG‐modified mitochondria exhibit enhanced cellular uptake and uptake‐associated respiratory modulation, providing a proof‐of‐concept framework for modular organelle engineering and future bioenergetic modulation ...
Masahiro Shiraishi   +9 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

open access: yesAdvanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei   +10 more
wiley   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

open access: yesAdvanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu   +21 more
wiley   +1 more source

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