Results 11 to 20 of about 2,995 (199)

High-Linearity and High-Speed ROIC of Ultra-Large Array Infrared Detectors Based on Adaptive Compensation and Enhancement

Sensors, 2023
In order to solve the problem of limited linearity and frame rate in the large array infrared (IR) readout integrated circuit (ROIC), a high-linearity and high-speed readout method based on adaptive offset compensation and alternating current (AC ...
Zhongjie Guo, Bin Wang, Suiyang Liu, Ruiming Xu, Ningmei Yu   +4 more
doaj   +1 more source

CMOS Image Sensor Random Telegraph Noise Time Constant Extraction From Correlated To Uncorrelated Double Sampling

IEEE Journal of the Electron Devices Society, 2017
A new method for on-chip random telegraph noise (RTN) characteristic time constant extraction using the double sampling circuit in an 8.3 Mpixel CMOS image sensor is described.
Calvin Yi-Ping Chao, Honyih Tu, Thomas Wu, Kuo-Yu Chou, Shang-Fu Yeh, Fu-Lung Hsueh   +5 more
doaj   +1 more source

Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process

IEEE Journal of the Electron Devices Society, 2021
It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao, Meng-Hsu Wu, Shang-Fu Yeh, Chin-Hao Chang, Chi-Lin Lee, Chin Yin, Kuo-Yu Chou, Honyih Tu   +7 more
doaj   +1 more source

Low-Noise Multimodal Reconfigurable Sensor Readout Circuit for Voltage/Current/Resistive/Capacitive Microsensors

Applied Sciences, 2020
This paper presents a low-noise reconfigurable sensor readout circuit with a multimodal sensing chain for voltage/current/resistive/capacitive microsensors such that it can interface with a voltage, current, resistive, or capacitive microsensor, and can ...
Donggeun You, Hyungseup Kim, Jaesung Kim, Kwonsang Han, Hyunwoo Heo, Yongsu Kwon, Gyungtae Kim, Woo Suk Sul, Jong Won Lee, Boung Ju Lee, Hyoungho Ko   +10 more
doaj   +1 more source

Fully Integrated Low-Noise Readout Circuit with Automatic Offset Cancellation Loop for Capacitive Microsensors

Sensors, 2015
Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop ...
Haryong Song, Yunjong Park, Hyungseup Kim, Dong-il Dan Cho, Hyoungho Ko   +4 more
doaj   +1 more source

A 12-Bit Column-Parallel Two-Step Single-Slope ADC With a Foreground Calibration for CMOS Image Sensors

IEEE Access, 2020
This paper proposes a novel 12-bit column-parallel two-step single-slope (SS) analog-to-digital converter (ADC) for high-speed CMOS image sensors. Cooperating with the output offset storage (OOS) technique, a new correlated double sampling (CDS) is ...
Qihui Zhang, Ning Ning, Jing Li, Qi Yu, Kejun Wu, Zhong Zhang   +5 more
doaj   +1 more source

Multi-Function Microelectromechanical Systems Implementation with an ASIC Compatible CMOS 0.18 μm Process

Micromachines, 2021
A multi-function microelectromechanical system (MEMS) with a three-axis magnetometer (MAG) and three-axis accelerometer (ACC) function was implemented with an application-specific integrated circuit (ASIC)-compatible complementary metal-oxide ...
Chih-Hsuan Lin, Chao-Hung Song, Kuei-Ann Wen   +2 more
doaj   +1 more source

Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification

Sensors, 2018
This paper presents an in-situ storage topology for ultra-high-speed burst mode imagers, enabling low noise operation while keeping a high frame depth.
Linkun Wu, David San Segundo Bello, Philippe Coppejans, Jan Craninckx, Andreas Süss, Maarten Rosmeulen, Piet Wambacq, Jonathan Borremans   +7 more
doaj   +1 more source

Area-efficient readout with 14-bit SAR-ADC for CMOS image sensors

MATEC Web of Conferences, 2016
This paper proposes a readout design for CMOS image sensors. It has been squeezed into a 7.5um pitch under a 0.28um 1P3M technology. The ADC performs one 14-bit conversion in only 1.5us and targets a theoretical DNL feature about +1.3/-1 at 14-bit ...
Aziza Sassi Ben, Dzahini Daniel
doaj   +1 more source

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

IEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao, Thomas M.-H. Wu, Shang-Fu Yeh, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon   +8 more
doaj   +1 more source