Results 181 to 190 of about 10,038,850 (263)

Deep Learning for AD Risk Screening and Progression Prediction

open access: yesAdvanced Science, EarlyView.
A pretrained MRI‐based deep learning model generalizes from Western cohorts to an independent Chinese cohort, detects Alzheimer's disease with high sensitivity, and identifies elevated AD risk years before diagnosis. Its risk scores align with cognition and plasma biomarkers, and individualized brain risk maps uncover clinically distinct subtypes ...
Bin Lu   +12 more
wiley   +1 more source

Theratyping for personalized medicine across cystic fibrosis disease models. [PDF]

open access: yesCommun Med (Lond)
Bezzerri V   +8 more
europepmc   +1 more source

3D Printing of Mechanical Recycled PA12/CF Composite. [PDF]

open access: yesPolymers (Basel)
Sandu IL   +3 more
europepmc   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko   +3 more
wiley   +1 more source

The role of ultrasound of the quadriceps femoris in people with cystic fibrosis: a systematic review and meta-analysis. [PDF]

open access: yesJ Bras Pneumol
Sernaglia JEC   +5 more
europepmc   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

open access: yesAdvanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter   +7 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

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