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Critical charge concepts for CMOS SRAMs
IEEE Transactions on Nuclear Science, 1995The dramatic effects of external circuit loading on the heavy-ion-induced charge-collection response of a struck transistor are illustrated using three-dimensional mixed-mode simulations. Simulated charge-collection and SEU characteristics of a CMOS SRAM cell indicate that, in some cases, more charge call be collected at sensitive nodes from strikes ...
P.E. Dodd, F.W. Sexton
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Critical indices for the charged Bose gas
Physics Letters A, 1973Abstract A self-consistent version of the static random phase approximation leads to a quasi-particle energy satisfying ϵ(k)=Akv for small k, where v ≈ 1.8. The critical indices are those of an ideal Bose gas with this spectrum.
P.V. Panat, H.E. DeWitt, J.C. Garrison
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Sliding charge density waves as a dynamic critical phenomenon
Physica B+C, 1984The dynamic properties of sliding charge-density waves are discussed in terms of a classical description of impurity pinning, with emphasis on the behavior near threshold considered as a dynamic critical phenomenon. A mean-field model introduced previously [Phys. Rev. Lett.
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Critical Conductivity and Charge Vortex Duality Near Quantum Criticality
2015Three decades ago, Fisher and Lee [1] showed that the SIT can be described as a Bose condensation of quantum vortices.
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Correlation effects close to the ground state critical charge of the two-electron atom
Chemical Physics Letters, 2021Jacob Katriel, H E Montgomery
exaly
A new physical mechanism for the formation of critical turn-on charge in thyristor structures
Semiconductors, 2005S N Yurkov, Mnatsakanov T T, Tandoev A G
exaly
The critical charge concept for 4H-SiC-based thyristors
Solid-State Electronics, 2003Michael Levinshtein +2 more
exaly
Critical care of patients with cancer
Ca-A Cancer Journal for Clinicians, 2016Alexander Shimabukuro-Vornhagen +2 more
exaly
UGANDA: Charges Over Criticisms
Africa Research Bulletin: Political, Social and Cultural Series, 2017openaire +1 more source
The critical charge density in high voltage 4H-SiC thyristors
Solid-State Electronics, 2003Michael Levinshtein +2 more
exaly

