Results 21 to 30 of about 470,484 (314)
Analysis of the High-Pressure High-Temperature (HPHT) growth of single crystal diamond [PDF]
, 2023 A multi-scale, computational model is developed to describe the growth characteristics of single-crystal diamond in the High-Pressure, High-Temperature (HPHT) process.
Friedrich, Jochen +6 more
core +1 more source
Strain Engineering of Ferroelectric Domains in KxNa1−xNbO3 Epitaxial Layers
Frontiers in Materials, 2017 The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior.
Jutta Schwarzkopf +4 more
doaj +1 more source
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy [PDF]
, 2014 We present a study on the growth of InAs1-xSbx alloy nanowires directly on Si (111) substrates via a self seeded mechanism for the first time. Through varying group V flow rate ratios, InAs1-xSbx nanowires with x = from 0 to 0.43 are obtained.
Wang, Zhan-Guo +15 more
core +1 more source
Nanomaterials, 2021 La-, Nd- and La/Nd-based polysubstituted high-entropy oxides (HEOs) were produced by solid-state reactions. Composition of the B-site was fixed for all samples (Cr0.2Mn0.2Fe0.2Co0.2Ni0.2) with varying of A-site cation (La, Nd and La0.5Nd0.5).
Vladimir E. Zhivulin +15 more
doaj +1 more source
Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate [PDF]
, 2015 We present a study of Au-free InAsSb nanowire (NW) growth on Si (111) substrate under different growth parameters including V/III ratio, group Sb flow rate fraction (Sb-FRF, TMSb/(TMSb+AsH3)), and temperature.
Xiaoguang Yang +17 more
core +1 more source
APL Materials, 2019 Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions.
Zbigniew Galazka +11 more
doaj +1 more source
Crystals, 2017 Φ1 inch Dy3+ and Ge4+ co-doped bismuth silicate (Bi4Si3O12, BSO) single crystals with the length of 80–100 mm were successfully grown by Bridgman method. They are transparent, free of cracks and inclusions.
Tian Tian +6 more
doaj +1 more source
Crystal growth kinetics of iron fluoride trihydrate [PDF]
, 2006 Crystal growth of beta-FeF3 • 3H(2)O has been investigated in mixtures of 3 mol kg(-1) hydrofluoric acid and 3 mol kg(-1) nitric acid at 30, 40 and 50 degrees C. Seeded isothermal desupersaturation experiments have been performed in the range: 1.3 < S
Forsberg, Kerstin,, Rasmuson, Åke C,
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Challenges in modeling of bulk crystal-growth [PDF]
, 2022 S.1-19This paper tries to analyze some of the presently existing problems and challenges in the field of modeling bulk crystal growth processes. Strategies will be discussed to meet and overcome these problems and challenges. The different topics will be
Friedrich, J., Müller, G.
core +1 more source
Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates [PDF]
, 2017 We have investigated the influence of nanohole size on selective-area growth (SAG) of InAs nanowire (NW) arrays on Si(111) substrates by metal-organic chemical vapor deposition.
Yang, Wenyuan +15 more
core +1 more source