Results 71 to 80 of about 18,901 (265)

Molecular Adsorbing Host•Guest (MAHG) Crystals: A New Paradigm for Porous Materials?

open access: yesAdvanced Functional Materials, EarlyView.
Networking! Introduction of guest molecules in macrocycles before crystallization profoundly influences the material obtained in terms of structure and function. Beside simplicity and porous space improvement, this approach is endowed with a huge potential given the myriad of potential guest molecules that can be used to tune this burgeoning class of ...
Ingrid Suzana   +4 more
wiley   +1 more source

NANOSTRUCTURAL PROCESSES OF MELTING AND MOULDING OF HYPOEUTECTIC SILUMIN

open access: yesЛитьë и металлургия, 2016
It is shown that melting and molding of hypoeutectic silumin are difficult physical and chemical nanostructural processes. In them the major role is played by the centers of crystallization of primary dendrites of aluminum, aluminum nanocrystals, the ...
V. Yu. Stetsenko
doaj  

PROBLEMS OF MODIFICATION STEEL CASTINGS BY NANOPARTICLES

open access: yesЛитьë и металлургия, 2015
It is suggested to use steel shot with the structure of tempered martensite for smelt modifying in the capacity of carriermodifier. It was applied barrier nickel layer and then wolfram nano-coating (over 200 nm) along with protective cobalt layer, which ...
V. Kovalevskij   +4 more
doaj   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa   +3 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

X‐Functionality–Driven Photocatalytic Hydrogen Evolution in 2D 4‐X‐PEA2SnI4 Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
We report a water‐based synthesis of 2D 4‐X‐PEA2SnI4 perovskite microcrystals with prominent photocatalytic (PC) activity for H2 production. The synergy between organic functionalization and HI‐derived iodide scavenges holes suppress octahedral distortion, and favor electron accumulation, enabling a PC H2 evolution ∼20 µmol·g−1 and long‐term stability ...
Taeyeon Kim   +21 more
wiley   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

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