Results 151 to 160 of about 691 (183)

Cu2ZnSnS4 thin film solar cells

Thin Solid Films, 2005
Abstract Aiming to develop the solar cells free from the environmental contaminants, promising solar cell of a thin film type could be produced by using Cu 2 ZnSnS 4 (CZTS) film as the absorber. The CZTS film possesses promising characteristic optical properties; band gap energy of about 1.5 eV and large absorption coefficient in the order of 10 4 ...
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Transmittance Spectra of Cu2ZnSnS4 Thin Films

Journal of Electronic Materials, 2015
Thin films of the quaternary compound semiconductor Cu2ZnSnS4 (CZTS) were produced by ion beam sputtering at substrate temperatures of 323 K, 423 K, and 573 K. The chemical and structural properties of the thin films were studied by electron microprobe analysis and grazing incidence x-ray diffraction.
Bodnar, I. V., Telesh, E. V., Gurieva, G., Schorr, S.   +3 more
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Thermal transport in Cu2ZnSnS4 thin films

Journal of Applied Physics, 2016
The stability of kesterite Cu2ZnSnS4 (CZTS) under a range of compositions leads to the formation of a number of stable defects that appear to be necessary for high efficiency photovoltaic applications. In this work, the impact of the presence of these defects on the thermal conductivity of CZTS thin films has been explored.
W. D. Thompson, Abhishek Nandur, B. E. White   +2 more
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Synthesis of Cu2ZnSnS4 nanoparticles by solvothermal route

AIP Conference Proceedings, 2016
CZTS nanoparticles of size ~ 20 nm have been synthesized by solvothermal method. X-ray diffraction pattern confirms the growth of single phase CZTS nanoparticles with kesterite structure and lattice parameter obtained as a = b = 0.54 nm and c = 1.08 nm. The Raman peak observed at 338 cm−1 also confirms the formation of pure CZTS phase.
Mohd. Zubair Ansari, Neeraj Khare, Vikram Kumar   +2 more
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Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4

Journal of Applied Physics, 2010
The electronic structure as well as the optical response of kesterite and stannite structures of Cu2ZnSnS4 and Cu2ZnSnSe4 are analyzed by a relativistic full-potential linearized augmented plane wave method. The energy dispersion of the conduction-band edge reveals larger effective electron mass of the two Cu2ZnSnS4 compounds (mc1≈0.18m0) compared with
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Выращивание и свойства монокристаллов Cu2ZnSnS4

2015
Cоединения типа A2BCX4, (АI –Cu, Ag; BII – Zn, Cd; XVI – S, Se, Te) в последнее время привлекают к себе внимание различных групп исследователей, что связано с перспективностью применения указанных материалов в качестве поглощающего слоя в тонкопленочных солнечных элементах [1–5].
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Исследование системы Cu2ZnSnS4–Cu2ZnSnSe4

2015
Направленной кристаллизацией расплава (вертикальный метод Бриджмена) выращены кристаллы соединений Cu2ZnSnS4, Cu2ZnSnSe4 и твердых растворов Cu2ZnSnS4хSe4(1-х). Методом микрорентгеноспектрального анализа определен состав полученных кристаллов, рентгеновским методом – их структура.
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Sn2+ and Cu2+ Self-Codoped Cu2ZnSnS4 Nanosheets Switching from p-Type to n-Type Semiconductors for Visible-Light-Driven CO2 Reduction

ACS Sustainable Chemistry and Engineering, 2022
Jinni Shen, Zizhong Zhang, Xuxu Wang
exaly  

Studies on Solution-Processed Cu2ZnSnS4 Nanoparticles

2023
K. G. Deepa, Praveen C. Ramamurthy
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Device Postannealing Enabling over 12% Efficient Solution‐Processed Cu2ZnSnS4 Solar Cells with Cd2+ Substitution

Advanced Materials, 2020
Xiaojing Hao, Yadong Wei, Fangyang Liu   +2 more
exaly