Results 171 to 180 of about 20,006 (235)

Gallium Nitride-Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform. [PDF]

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Haider F, Esmat B, Kashif AR, Khan MS, Safeen A, Khan BA, Khan K, Ali B.   +7 more
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The Impact of Boron Nitride Additive on Thermal and Thermochromic Properties of Organic Thermochromic Phase Change Materials. [PDF]

Materials (Basel)
Paprota N, Szumera M, Pielichowska K.
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Ultrahard nanotwinned cubic boron nitride

Nature, 2013
Cubic boron nitride (cBN) is a well known superhard material that has a wide range of industrial applications. Nanostructuring of cBN is an effective way to improve its hardness by virtue of the Hall-Petch effect--the tendency for hardness to increase with decreasing grain size.
Yongjun, Tian, Bo, Xu, Dongli, Yu, Yanming, Ma, Yanbin, Wang, Yingbing, Jiang, Wentao, Hu, Chengchun, Tang, Yufei, Gao, Kun, Luo, Zhisheng, Zhao, Li-Min, Wang, Bin, Wen, Julong, He, Zhongyuan, Liu   +14 more
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Optical properties of cubic boron nitride

Physical Review B, 1995
Optical properties of cubic boron nitride were studied in the spectral range from 400 to 50 000 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$. Raman-scattering, absorption, and reflection spectra were measured. The regions of the one-phonon and multiphonon absorption were studied in detail and the energies of the phonons were determined. The dispersion of
Eremets, M., Gauthier, Michel, Polian, A., Chervin, J., Besson, M., Dubitskii, A., Semenova, Ye. Ye.   +6 more
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Optical constants of cubic boron nitride

Physical Review B, 1989
The optical constants of cubic boron nitride were determined for the first time in the vacuum ultraviolet. The fundamental optical-absorption edge determined from these optical constants is 6.1\ifmmode\pm\else\textpm\fi{}0.2 eV.
, Miyata, , Moriki, , Mishima, , Fujisawa, , Hattori   +4 more
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Electronic correlations of cubic boron nitride

Physical Review B, 1991
We have calculated total and binding energies of zinc-blende-structure boron nitride. Starting from a self-consistent-field ground-state calculation within a finite basis of Gaussian orbitals centered at the different atoms, the electron correlations were treated by applying the local ansatz.
, Ganduglia-Pirovano, , Stollhoff
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Raman and photoluminescence spectra of indented cubic boron nitride and polycrystalline cubic boron nitride

Diamond and Related Materials, 2000
Abstract The use of Raman spectroscopy, and in particular Raman line shifts, to measure stress in diamond and nitrides such as gallium nitride (GaN), is well known. In both diamond and GaN the application is principally to study stresses in thin films and at the substrate–thin film interface.
R.M. Erasmus, J.D. Comins, M.L. Fish
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Semiconducting cubic boron nitride

Diamond and Related Materials, 1998
Abstract We present new developments in the preparation of semiconducting cubic boron nitride. The thin films were grown on (100) silicon substrates using electron cyclotron resonance (ECR) ion-assisted magnetron sputtering with the kinetic energy of the incident nitrogen ions controlled by a dc substrate bias.
Dmitri Litvinov, Charles A. Taylor, Roy Clarke   +2 more
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