Results 111 to 120 of about 9,574,598 (297)

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

IEEE Journal of the Electron Devices Society
This paper presents a high gain voltage amplifier based on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with monolithically integrated enhancement-mode (E-mode) and depletion-mode (D-mode) devices.
Pingyu Cao, Kepeng Zhao, Harm Van Zalinge, Ping Zhang, Miao Cui, Fei Xue   +5 more
doaj   +1 more source

Secure communication through switched-current chaotic circuits

, 1995
This paper presents the use of analog integrated circuits for secure communication based on chaos synchronization. The phenomenon is demonstrated through experimental measurements realized on silicon prototypes in a double-metal, single-poly 1.6 /spl mu ...
Rodríguez Vázquez, Ángel Benito, Delgado Restituto, Manuel, López de Ahumada Gutiérrez, Rafael   +2 more
core   +1 more source

Structural Power Composites Based on High Mass Loading Zn‐Ion Hybrid Supercapacitors with Metal Mesh Current Collectors and Aramid Nanofiber/Glass Fiber Composite Electrolytes

Advanced Functional Materials, EarlyView.
A multifunctional structural power composite is developed by integrating high‐mass‐loading Zn‐ion hybrid supercapacitors with metal mesh current collectors and aramid nanofiber‐based composite electrolytes, enabling simultaneous load‐bearing capability and enhanced areal energy storage.
Yuseung Choi, Gilyong Shin, Hoyeon Lee, Eun Jae Nam, Byeong Jun So, Sungryul Yun, Fu‐Kuo Chang, Jei Gyeong Jeon, Tae June Kang   +8 more
wiley   +1 more source

A Versatile Cell of Multimode First-Order Universal Filter Using VCIIs

Journal of Electrical and Computer Engineering
This article presents a new generic core cell for designing the first-order universal filter employed second-generation voltage conveyor (VCII+). With appropriate admittance selection, the proposed core cell can derive four different filter types, namely,
Seangrawee Buakaew, Vinai Silaruam
doaj   +1 more source

High-Precision CMOS Analog Computational Circuits Based on a New Linearly Tunable OTA [PDF]

Radioengineering, 2016
Implementation of CMOS current-mode analog computational circuits are presented in this paper. A new Linearly Tunable OTA is employed in a modified structure as a basic building block for implementation of the circuits either linear or nonlinear ...
A. Naderi Saatlo
doaj  

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source

Effect of wearout processes on the critical timing parameters and reliability of CMOS bistable circuits [PDF]

, 1997
The objective of the research presented in this thesis was to investigate the effects of wearout processes on the performance and reliability of CMOS bistable circuits.
Das, A.G. Man Mohan
core