Results 311 to 320 of about 553,452 (357)
Some of the next articles are maybe not open access.
1998
Deep contact hole and through-hole filling techniques are becoming the most important technology with the decreasing feature size of ULSI devices. The filling technique for deeper and smaller contact holes is becoming a more critical technology because of global planarization using CMP and capacity reduction requirements. Therefore the PVD (sputtering)
openaire +1 more source
Deep contact hole and through-hole filling techniques are becoming the most important technology with the decreasing feature size of ULSI devices. The filling technique for deeper and smaller contact holes is becoming a more critical technology because of global planarization using CMP and capacity reduction requirements. Therefore the PVD (sputtering)
openaire +1 more source
2015
Cardiovascular disease (CVD) is the first cause of mortality and morbidity worldwide. It is responsible for 30 % of all deaths, so that more people die annually from CVD than from any other cause, and 10 % of global burden disease. Currently, the vast majority of deaths and disabilities due to CVD take place in low- and middle-income countries.
D'ANDREA, ELVIRA +2 more
openaire +1 more source
Cardiovascular disease (CVD) is the first cause of mortality and morbidity worldwide. It is responsible for 30 % of all deaths, so that more people die annually from CVD than from any other cause, and 10 % of global burden disease. Currently, the vast majority of deaths and disabilities due to CVD take place in low- and middle-income countries.
D'ANDREA, ELVIRA +2 more
openaire +1 more source
2011
The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates (21) contacting a susceptor (2), wherein process gases can be introduced into the process chamber (1) through flow channels (15, 16; 18) of a gas inlet organ (8), together with a carrier gas, said
AIXTRON AG, STRAUCH GERHARD KARL
openaire +1 more source
The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates (21) contacting a susceptor (2), wherein process gases can be introduced into the process chamber (1) through flow channels (15, 16; 18) of a gas inlet organ (8), together with a carrier gas, said
AIXTRON AG, STRAUCH GERHARD KARL
openaire +1 more source
Cardiac Lymphangiogenesis in CVDs
Arteriosclerosis, Thrombosis, and Vascular BiologyPeer ...
Brakenhielm, Ebba +2 more
openaire +3 more sources
2018
?????????????? ???????????????????????? ?????????????????????????? ?????????????? ?????????????????????? ??????????????????-?????????????????????????? ?????????? ?? ?????????????????? ??????????????-???????????????????????????? ??????????????????, ?????????????????? ?????? ?????????????? ?? ?????????????????? ?????????????????????????????????? ?????????
+6 more sources
?????????????? ???????????????????????? ?????????????????????????? ?????????????? ?????????????????????? ??????????????????-?????????????????????????? ?????????? ?? ?????????????????? ??????????????-???????????????????????????? ??????????????????, ?????????????????? ?????? ?????????????? ?? ?????????????????? ?????????????????????????????????? ?????????
+6 more sources
Status of Cat-CVD (Hot-Wire CVD) research in Europe
Thin Solid Films, 2001In Europe, an increasing number of groups are commencing and expanding research on the Hot Wire CVD process, and on the unique materials and optoelectronic devices that can be obtained with this process. There are at least seven laboratories that are intensively studying and utilizing the Hot Wire CVD process, while other groups who do not presently ...
openaire +2 more sources
2022
?????????????? ?????????????????????? ?????????????????? ???? ?????????????? ???????? ??-?????????????????????? ?????????? ?? ???????????? ???????????????? ???????????????? ???? ?????????????? ???? ???????????????????? ??????????????????. ???????????? ?? ?????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?? ?????????????
openaire +1 more source
?????????????? ?????????????????????? ?????????????????? ???? ?????????????? ???????? ??-?????????????????????? ?????????? ?? ???????????? ???????????????? ???????????????? ???? ?????????????? ???? ???????????????????? ??????????????????. ???????????? ?? ?????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?? ?????????????
openaire +1 more source
2016
???????????????????? ???????????????? ???????????????????????? ?????????????? ?????????????????????? ?????????? ?? ???????????????? ?????????????? ?? ?????????????? ???????????? ???? ?????????????? ?????????????????? ?????????????????? ???? ???????????????? ?? ?????????????? ?????????????? CVD, ???? ???????????? ???????????????????? ????????????????????
openaire +3 more sources
???????????????????? ???????????????? ???????????????????????? ?????????????? ?????????????????????? ?????????? ?? ???????????????? ?????????????? ?? ?????????????? ???????????? ???? ?????????????? ?????????????????? ?????????????????? ???? ???????????????? ?? ?????????????? ?????????????? CVD, ???? ???????????? ???????????????????? ????????????????????
openaire +3 more sources
2017
?????????????????? ?????????????????????? ?????????????????????? ???????????????????????? ?????????????? CVD-???????????? ???????????? ?????????????????????? ???????????????????????? ?? ?????????????????? ??????????????????, ???????????????????? ?? ???????????? ???????????????? ?????????? ???? ??????????????????????. ?????????????? ?????????????????????
openaire +3 more sources
?????????????????? ?????????????????????? ?????????????????????? ???????????????????????? ?????????????? CVD-???????????? ???????????? ?????????????????????? ???????????????????????? ?? ?????????????????? ??????????????????, ???????????????????? ?? ???????????? ???????????????? ?????????? ???? ??????????????????????. ?????????????? ?????????????????????
openaire +3 more sources
2015
Production processes of multi-layered Mo-C coatings by the method of chemical vapor deposition (CVD) with the use of organometallic compounds were developed. Construction features of equipment for pyrolisys of metallorganic compounds (chromium, molybdenum, tungsten carbonyls and volatile aluminum containing compounds) and volatile organic compounds ...
openaire +3 more sources
Production processes of multi-layered Mo-C coatings by the method of chemical vapor deposition (CVD) with the use of organometallic compounds were developed. Construction features of equipment for pyrolisys of metallorganic compounds (chromium, molybdenum, tungsten carbonyls and volatile aluminum containing compounds) and volatile organic compounds ...
openaire +3 more sources

