Results 151 to 160 of about 866 (198)

Overcoming the V_oc limitation of CZTSe solar cells [PDF]

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016
The V oc deficit issue is considered to be the most significant limitation of high-performance kesterite devices [1]. Secondary phases, defects, band tailing and interface recombination at the kesterite/CdS heterojunction are possible reasons for the low V oc .
Risch, L., Vauche, L., REDINGER, Alex, Dimitrievska, M., Sánchez, Y., Saucedo, E., Unold, T., Goislard, T., Ruiz, C. M., Escoubas, L., Simon, J. J.   +10 more
openaire   +3 more sources

Some of the next articles are maybe not open access.

Related searches:

Impact of germanium nano layer on the CZTSe absorber layer properties

Materials Science in Semiconductor Processing, 2022
Abstract In the present work, in order to study the effect of Germanium (Ge) thin layer incorporation on the CZTSe films, the Ge thin layer was deposited on the backside of the CZTSe as well as in between the CZTSe. The films were prepared with the help of thermal evaporation technique in stack format using all the constituents.
Srinibasa Padhy, Vishvas Kumar, Nandu B Chaure   +2 more
exaly   +2 more sources

Synthesis of CZTS Nanocrystals and Transformation into CZTSE by Hot Injection of Selenium [PDF]

, 2014
29th European Photovoltaic Solar Energy Conference and Exhibition; 1844 ...
Engberg, S., Li, Z., Lek, J.Y., Lam, Y.M., Schou, J.   +4 more
openaire   +2 more sources

Improved CZTSe solar cell efficiency via silver and germanium alloying [PDF]

Solar Energy
In this study, we report systematic investigation of the effects of Ag and Ge alloying on properties of CZTSe layers, as well as, on the performance of solar cells fabricated using these films.
Ali Ciris, Mehmet Ali Olgar, Recep Zan
exaly   +3 more sources

Numerical analysis of the role of p-MoSe2 interfacial layer in CZTSe thin-film solar cells using SCAPS simulation [PDF]

Optik, 2021
This work aims to report on the effect of p-MoSe2 transition metal dichalcogenide as an interfacial layer between the CZTSe absorber and Mo back contact in the CZTSe solar cells, using the solar cell capacitance simulator (SCAPS-1D).
Mohamed Moustafa, Tariq Alzoubi, S Yasin   +2 more
exaly   +2 more sources

Effects of elemental ratios in CZTSe film on CZTSe/CdS band alignment and inhomogeneity in absorber thermal conductivity

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016
CZTSe solar cells with different elemental ratios are compared for their photo-response with low and high illumination densities. Elemental ratios are found not only affecting the defect density, but also Mo/CZTSe/CdS band alignment. Higher Sn/Cu and lower Zn ratio was found more immune to EQE droop at high power illumination, although it yields lower ...
Qiong Chen, Yong Zhang
openaire   +1 more source

Fabrication and Electronic Properties of CZTSe Single Crystals

IEEE Journal of Photovoltaics, 2015
CZTSe single crystals of different compositions were fabricated by solid-state reaction of elements in a sealed ampoule below the melt temperature. About 2-5-mm crystals were achieved without a flux agent, which, when present, can potentially affect defect properties in the material.
Douglas M. Bishop, Brian E. McCandless, Richard Haight, David B. Mitzi, Robert W. Birkmire   +4 more
openaire   +1 more source

CZTSe devices fabricated from CZTSSe nanoparticles

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013
To understand and control the growth paths of kesterite based CZTSe films as prepared from kesterite nanoparticles we investigate films prepared from different chalcogenide ratios in the initial nanoparticles. To do so we introduce a new method for producing kesterite nanocrystals with controlled ratios of sulfur and selenium.
Bryce C. Walker, Bethlehem G. Negash, Stephen M. Szczepaniak, Kevin W. Brew, Rakesh Agrawal   +4 more
openaire   +1 more source

Surface preparation for 10% efficient CZTSe solar cells

Progress in Photovoltaics: Research and Applications, 2020
AbstractKesterite‐based solar cells suffer from a large open‐circuit voltage deficit, which largely arises from carrier recombination at the buffer interface. In this study, we compare two strategies to passivate the absorber surface in order to fabricate devices with power conversion efficiency higher than 10% and an open‐circuit voltage deficit as ...
Grenet, Louis, Emieux, Fabrice, Choubrac, Léo, Márquez, José, de Vito, Eric, Roux, Frédéric, Unold, Thomas   +6 more
openaire   +3 more sources

Optimization of selenization parameters for fabrication of CZTSe thin film

Superlattices and Microstructures, 2020
Abstract For the formation of CZTSe films, selenization time and temperature play a crucial role in a material synthesis which in turn highly affects the properties of the films. In this work, Cu, Zn, Sn and Se were thermally-deposited sequentially on Mo coated soda-lime glass (SLG) substrates.
Vishvas Kumar, Alapan Dutta, Udai P. Singh   +2 more
openaire   +1 more source