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Application of Strain Engineering in Solar Cells. [PDF]

Molecules
Fei H, Shang C, Sang D, Li C, Ge S, Zou L, Wang Q.   +6 more
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Influences of selenization temperature on the properties of CZTSSe thin films and CZTSSe/Mo interfaces

Journal of Materials Science: Materials in Electronics, 2021
Cu2ZnSn(S,Se)4 (CZTSSe) thin films were prepared on molybdenum foil substrate by sol–gel method. The effects of selenization temperature on the properties of CZTSSe thin films and CZTSSe/Mo interfaces were studied. The phase structures, elemental compositions, and morphologies of CZTSSe thin films and the morphologies and electrical properties of ...
Xiaoshuai Wu, Jiaxiong Xu, Chunan Zhuang
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CZTSSe solar cells: insights into interface engineering

Journal of Materials Chemistry A, 2023
Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic (PV) technology has attracted much attention due to its cost efficiency, non-toxic nature, and use of earth-abundant elements.
Yimeng Li, Hao Wei, Changcheng Cui, Xiao Wang, Zhipeng Shao, Shuping Pang, Guanglei Cui   +6 more
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CZTSSe Formation Mechanism Using a Cu/Zn/SnS Stacked Precursor: Origin of Triple CZTSSe Layer Formation

ACS Applied Materials & Interfaces, 2020
In this study, to control the formation of non-uniformly distributed large voids and Cu-Sn alloy agglomeration, which leads to local compositional misfit and secondary phase formation, a SnS compound precursor was applied instead of metal Sn to avoid compositional non-uniformity.
Se-Yun Kim, Seung-Hyun Kim, Dae-Ho Son, Young-Ill Kim, Sammi Kim, Shi-Joon Sung, Kee-Jeong Yang, Dae-Hwan Kim, Jin-Kyu Kang   +8 more
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XPS study of CZTSSe monograin powders

Thin Solid Films, 2011
Abstract The surface and bulk composition of Cu2ZnSn(SexS1-x)4 (CZTSSe) monograin powders were investigated by X-ray photoelectron spectroscopy (XPS). The concentration depth profiling of CZTSSe monograin powders was obtained by Ar+ ion etching. According to the XPS spectra of CZTSSe monograin powder, the binding energies of Zn 2p3/2, Cu 2p3/2, Sn ...
M. Danilson, M. Altosaar, M. Kauk, A. Katerski, J. Krustok, J. Raudoja   +5 more
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CZTSe devices fabricated from CZTSSe nanoparticles

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013
To understand and control the growth paths of kesterite based CZTSe films as prepared from kesterite nanoparticles we investigate films prepared from different chalcogenide ratios in the initial nanoparticles. To do so we introduce a new method for producing kesterite nanocrystals with controlled ratios of sulfur and selenium.
Bryce C. Walker, Bethlehem G. Negash, Stephen M. Szczepaniak, Kevin W. Brew, Rakesh Agrawal   +4 more
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Grain growth of CZTSSe via nanocrystal selenization

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013
Achieving micro-sized and closed packed grains is an essential requirement for high performance chalcogenide thin film solar cells. The grain growth mechanism of CZTSSe starting from nanocrystal films appears to be affected by the capping ligands composed of long hydrocarbon chains.
Wan-Ching Hsu, Huanping Zhou, Song Luo, Shenglin Ye, Tze-Bin Song, Yang Yang   +5 more
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Extreme radiation hard thin film CZTSSe solar cell

Solar Energy Materials and Solar Cells, 2018
Abstract In this work, we have demonstrated the extreme radiation hardness of thin film CZTSSe solar cells. Thin film solar cells with CZTSSe, CZTS and CIGS absorber layers were irradiated with 3 MeV protons. No degradation in device parameters was observed until a displacement damage dose of 2 × 1010 MeV/g for CZTS and CZTSSe.
Sethu Saveda Suvanam, Jes Larsen, Nils Ross, Volodymyr Kosyak, Anders Hallén, Charlotte Platzer Björkman   +5 more
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Characterization of printed CZTSSe films for photovoltaic applications

SPIE Proceedings, 2013
Cu2ZnSn(S, Se)4 (CZTSSe) is a promising alternative absorber material for thin-film photovoltaic applications because of its earth-abundant constituents, tunable band gap, and high optical absorption coefficient. Using binary and ternary chalcogenide nanoparticles as precursors we have developed a chemical route to produce high efficiency CZTSSe ...
Wei Wu, Yanyan Cao, Jonathan V. Caspar, Qijie Guo, Lynda Johnson, Irina Malajovich, H. David Rosenfeld, Kaushik Roy Choudhury, Lee Silverman   +8 more
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Formation of CZTSSe absorber layer using thiourea treatment of CZTSe

Materials Today: Proceedings, 2021
Abstract In the present work, CZTSe (Cu2ZnSnSe4) films were deposited by Thermal evaporation technique. The as deposited films were annealed at 450 °C for 10 min. To incorporate Sulfur in the CZTSe film and to replace some of the Se by S, the films (as deposited and annealed) were treated with Thiourea solution (1 Molar).
Vishvas kumar, Udai P. Singh
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