Results 251 to 260 of about 16,318,448 (302)
Some of the next articles are maybe not open access.
Resonance enhancement of the nickel d-band photoemission
Physics Letters A, 1979Abstract A detailed analysis of the Ni d-band photoemission near the 3p threshold is presented. The results demonstrate that the d-band emission is coupled to the 3p excitation. The coupling is shown to differ for different parts of the d-band.
Barth, J., Kalkoffen, G., Kunz, C.
openaire +2 more sources
D-Band Frequency Quadruplers in BiCMOS Technology
IEEE Journal of Solid-State Circuits, 2018This paper presents two D-band frequency quadruplers (FQs) employing different circuit techniques. First FQ is a 129–171-GHz stacked Gilbert-cell multiplier using a bootstrapping technique, which improves the bandwidth and the conversion gain with respect to the conventional topology.
Maciej Kucharski +5 more
openaire +1 more source
Design of a Dual W- and D-Band PLL
IEEE Journal of Solid-State Circuits, 2011This paper describes the design considerations and performance of the highest frequency phase-locked loop (PLL) reported to date. The PLL was fabricated in a 0.13-μm SiGe BiCMOS process and integrates on a single die: a fundamental-frequency 86-92 GHz Colpitts voltage-controlled oscillator (VCO), a differential push-push 160-GHz Colpitts VCO with two ...
Shahriar Shahramian +6 more
openaire +2 more sources
Surface stress in d-band metal surfaces
Journal of Physics: Condensed Matter, 2010Using calculations within the density functional approach, we make a survey of the surface stresses of relevant d-band metal surfaces. Unlike the case for surface energies, where volcano-shaped dependences have been found across the d period, the surface stress values show a non-trivial dependence on the metal species and surface termination, which ...
M, Blanco-Rey, S J, Jenkins
openaire +2 more sources
Chemisorption on d-Band Metals
1980This chapter is devoted to a discussion of the surface properties of the noble metals and transition metals. There is far and away more experimental data on the surfaces of these metals than on any other class of solid surfaces. The reasons primarily are that their surfaces are relatively easy to clean and they are very important technologically.
F. J. Arlinghaus, J. G. Gay, J. R. Smith
openaire +1 more source
Sorting of Archaeological Samples in D-band
2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting, 2020Identifying the making of prehistoric pottery is one of the valuable means of tracing technical traditions and human mobility. We are interested here in the settlement in the Western Mediterranean through the sorting of pottery samples. The aim is to discriminate between two building techniques, looking for the features formed by the air bubbles ...
Zidane, Flora +6 more
openaire +2 more sources
Anderson impurities in d-band superconductors
Physics Letters A, 1982Abstract The effects of Anderson impurities on the critical temperature of a d-band superconductor in which the presence of the conduction band is taken into account is studied. A set of coupled vertex (Bethe-Salpeter) equations in which the exchange is the irreducible vertex function arising from the correlation of the Anderson impurity D-electrons ...
I.M. Tang, S. Roongkeadsakoon
openaire +1 more source
Journal of Physics and Chemistry of Solids, 1963
Abstract The significance of measurements of d -band transitions in solids is discussed and qualitative criteria necessary for direct observation of d -band transitions are established. Data on the positions of far ultraviolet absorption edges in In, Sn, Pb, and Bi are presented and the evidence for their assignment to d -band transitions is ...
openaire +1 more source
Abstract The significance of measurements of d -band transitions in solids is discussed and qualitative criteria necessary for direct observation of d -band transitions are established. Data on the positions of far ultraviolet absorption edges in In, Sn, Pb, and Bi are presented and the evidence for their assignment to d -band transitions is ...
openaire +1 more source
[Conference Digest] International Conference on Millimeter Wave and Far-Infrared Technology: ICMWFT '90, 2005
This paper reports the progress in D-band CW silicon IMPATT diode. The small-signal. computer simulation of a diode has been performed. The preliminary experiments of the single-drift IMPATT diode show a aw output power of 73 mW at 116.7GHz and 34mW at 126GHz, respectively.
null Li-Rong Jin +6 more
openaire +1 more source
This paper reports the progress in D-band CW silicon IMPATT diode. The small-signal. computer simulation of a diode has been performed. The preliminary experiments of the single-drift IMPATT diode show a aw output power of 73 mW at 116.7GHz and 34mW at 126GHz, respectively.
null Li-Rong Jin +6 more
openaire +1 more source
Development of D-band Gunn oscillator
2008 International Conference on Recent Advances in Microwave Theory and Applications, 2008Gunn oscillator has been developed at center frequency of 140 GHz with the output power of 7 dBm using InP Gunn device. Resonant cap design approach was chosen due to its superiority in tunability and low FM noise. The Gunn Oscillator has been temperature cycled form 0degC to +50degC and a frequency stability of 200 KHz/degC was observed.
Meena R. Kumar, Dilip Kumar, A.K. Shukla
openaire +1 more source