Results 251 to 260 of about 1,019,732 (289)

Theory for Superconductivity in d-Band Metals

AIP Conference Proceedings, 1972
Superconductivity in transition metals, in transition metal alloys, in A‐15 compounds and in U6X compounds is studied within the framework of the B.C.S. theory. The electron‐phonon coupling constant λ is expressed in terms of measureable normal‐state quantities and an atomic parameter. Then, using the McMillan formula for the superconducting transition
K. H. Bennemann, J. W. Garland, Hugh C. Wolfe, D. H. Douglass   +3 more
openaire   +1 more source

Sorting of Archaeological Samples in D-band

2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting, 2020
Identifying the making of prehistoric pottery is one of the valuable means of tracing technical traditions and human mobility. We are interested here in the settlement in the Western Mediterranean through the sorting of pottery samples. The aim is to discriminate between two building techniques, looking for the features formed by the air bubbles ...
Zidane, Flora, Migliaccio, Claire, Lanteri, Jérôme, Brochier, Laurent, Coli, Vanna Lisa, Binder, Didier, Gomart, Louise   +6 more
openaire   +2 more sources

D-Band Micromachined Silicon Rectangular Waveguide Filter

IEEE Microwave and Wireless Components Letters, 2012
The 140 GHz silicon micromachined bandpass rectangular waveguide filters are firstly fabricated by the deep reactive ion etching (DRIE) processes for submillimeter wave applications. The filter circuit structure is once-formed using the ICP reactive ion etcher to etch through the full thickness of the silicon wafer, and then bonded together with the ...
X. H. Zhao, J. F. Bao, G. C. Shan, Y. J. Du, Y. B. Zheng, Y. Wen, C. H. Shek   +6 more
openaire   +1 more source

D-Band Frequency Quadruplers in BiCMOS Technology

IEEE Journal of Solid-State Circuits, 2018
This paper presents two D-band frequency quadruplers (FQs) employing different circuit techniques. First FQ is a 129–171-GHz stacked Gilbert-cell multiplier using a bootstrapping technique, which improves the bandwidth and the conversion gain with respect to the conventional topology.
Maciej Kucharski, Mohamed Hussein Eissa, Andrea Malignaggi, Defu Wang, Herman Jalli Ng, Dietmar Kissinger   +5 more
openaire   +1 more source

D-band and mixed-valency semiconductors

Journal of Physics and Chemistry of Solids, 1959
Abstract In many cases the shell and band models predict identical or similar results. In such cases it is only a matter of personal preference as to which model is used. However, there are other cases where the two models make different predictions.
openaire   +1 more source

A D-band monolithic low noise amplifier

GaAs IC Symposium Technical Digest 1992, 2003
A D-band monolithic two-stage low-noise amplifier (LNA) has been developed using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise high-electron-mobility transistor (HEMT) technology. The amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an ...
H. Wang, T.N. Ton, K.L. Tan, D. Garske, G.S. Dow, J. Berenz, M.W. Pospieszalski, S.K. Pan   +7 more
openaire   +1 more source

Si-based D-band frequency conversion circuits

2012 International SoC Design Conference (ISOCC), 2012
A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range,
Dong-Hyun Kim, Jongwon Yun, Jae-Sung Rieh   +2 more
openaire   +1 more source

D-band amplifier using metamorphic HEMT technology

2008 Asia-Pacific Microwave Conference, 2008
In this paper, we successfully demonstrated the D-band MMIC amplifiers based on 0.1 mum InGaAs/InAlAs/GaAs MHEMT which has two fingers of 30 mum gate width. The device exhibited a cut-off frequency (fT) of 189 GHz, and a maximum oscillation frequency (fmax) of 334 GHz.
null Yong-Hyun Baek, null Seok-Gyu Choi, null Sang-Jin Lee, null Tae-Jong Baek, null Min Han, null Jung-Hun Oh, null Hui-chul Cho, null Eung-Ho Rhee, null Jin-Koo Rhee   +8 more
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Single Material Multilayer Radome for D Band Applications

2024 18th European Conference on Antennas and Propagation (EuCAP)
The paper presents results of design and testing of a single material multilayer (SMML) radome for applications in D-band. The two-layer radome is designed and tested. Both layers are fabricated of a single plate of PREPERM RS260 material. The first layer is a homogeneous layer, and the second layer has a pattern of cavities configured to decrease an ...
Hujanen Arto, Ermolov Vladimir
openaire   +1 more source

Probing d-band superconductivity in XIr3 compounds

Physica B: Condensed Matter, 1990
Abstract Gd and U were introduced as site-specific probes into the XIr3 (PuNi3 structure) superconductors where X = Y, La, Ce and Th. In all cases, superconductivity extends to at least 10 at% Gd or U substituted for X, indicating that the superconducting electrons only weakly interact with ions at the X sites. It is concluded that the XIr3 compounds,
openaire   +1 more source