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Theory for Superconductivity in d-Band Metals
AIP Conference Proceedings, 1972Superconductivity in transition metals, in transition metal alloys, in A‐15 compounds and in U6X compounds is studied within the framework of the B.C.S. theory. The electron‐phonon coupling constant λ is expressed in terms of measureable normal‐state quantities and an atomic parameter. Then, using the McMillan formula for the superconducting transition
K. H. Bennemann +3 more
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International Journal of Quantum Chemistry, 2009
In transition metals, the d shells lead to relatively hard cores compared with the simpler sp metals. Furthermore, there is some evidence that directional effects due to d orbitals increase through the sequence face-centered-cubic (fcc), hexagonal close-packed (hcp), and body-centered-cubic (bcc) structures.
C. C. Matthai, P. J. Grout, N. H. March
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In transition metals, the d shells lead to relatively hard cores compared with the simpler sp metals. Furthermore, there is some evidence that directional effects due to d orbitals increase through the sequence face-centered-cubic (fcc), hexagonal close-packed (hcp), and body-centered-cubic (bcc) structures.
C. C. Matthai, P. J. Grout, N. H. March
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The Dependence of Graphene Raman D-band on Carrier Density
Nano Letters, 2013Raman spectroscopy has been an integral part of graphene research and can provide information about graphene structure, electronic characteristics, and electron-phonon interactions. In this study, the characteristics of the graphene Raman D-band, which vary with carrier density, are studied in detail, including the frequency, full width half-maximum ...
Junku, Liu +7 more
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Si-based D-band frequency conversion circuits
2012 International SoC Design Conference (ISOCC), 2012A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range,
Dong-Hyun Kim +2 more
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A Review of the D-band Antennas
2022 14th Global Symposium on Millimeter-Waves & Terahertz (GSMM), 2022Amir Altaf, Munkyo Seo
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Modulation Optimization for D-band Wireless Transmission Link
Optical Fiber Communication Conference, 2017High-performance high-frequency mm-wave amplifier and other components, particularly those at D-band, are difficult to manufacture. We optimize modulation format for one 150-GHz D-band vector-mm-wave system and demonstrate OFDM can better tolerate imperfect-gain-characteristic of D-band amplifier.
Xinying Li +4 more
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2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2022
Liu Jun, Song Ruiliang, Lv Xin
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Liu Jun, Song Ruiliang, Lv Xin
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D-band and mixed-valency semiconductors
Journal of Physics and Chemistry of Solids, 1959Abstract In many cases the shell and band models predict identical or similar results. In such cases it is only a matter of personal preference as to which model is used. However, there are other cases where the two models make different predictions.
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Local Icosahedral Packing Energetics for d-band Metals
Materials Science and Engineering, 1988Abstract Local icosahedral order in solid environments is modelled by polytope {3, 3, 5} (a packing of atoms on S 3 , the surface of the unit sphere in four dimensions, with perfect icosahedral symmetry) and by a 147 atom extension of the Mackay icosahedron. The bonding energies of each are calculated in a one-electron d-band, tight binding model, as
Robert B. Phillips, A.E. Carlsson
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Surface states in d band metals
Journal of Physics F: Metal Physics, 1971A method for calculating surface states in d band metals is proposed, using a hybrid nearly-free-electron tight-binding theory. The results of model calculations with parameters appropriate to copper and nickel are presented. For copper the results are in agreement with a previous calculation by Forstmann and Heine.
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