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2020
Characterization of the LW10 devices showed the presence of four main sources of dark current: diffusion, generation-recombination, band-to-band tunneling, and trap-to-band tunneling dark current.
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Characterization of the LW10 devices showed the presence of four main sources of dark current: diffusion, generation-recombination, band-to-band tunneling, and trap-to-band tunneling dark current.
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Very low dark current heterojunction CCD's
IEEE Transactions on Electron Devices, 1982A model has been formulated which accounts for the major sources of dark current (J D ) associated with a single pixel of a heterojunction, Schottky gate charge-coupled device (CCD). This model predicts the temperature dependence of J D and shows that for properly fabricated gates, bulk generation in the channel is the primary source of dark current ...
R.A. Milano +3 more
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Dark Current in Photomultipliers
IRE Transactions on Nuclear Science, 1960A study has been undertaken to determine the nature of the processes that contribute to dark current in photomultipliers. Extensive measurements have been made on a number of production-type photomultipliers and on a series of experimental tubes that were designed to minimize leakage and regeneration.
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Dark Matter Detection: Current Status
Nuclear Physics B - Proceedings Supplements, 2011Overwhelming observational evidence indicates that most of the matter in the Universe consists of non-baryonic dark matter. One possibility is that the dark matter is Weakly-Interacting Massive Particles (WIMPs) that were produced in the early Universe. These relics could comprise the Milky Wayʼs dark halo and provide evidence for new particle physics,
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2015
The dark current density in any minority carrier detector architecture is determined by the thermal generation rate per unit volume, Jd ¼ qGtht ¼ qNmint/t, where Nmin is the equilibrium density of minority carriers in the detector volume under consideration, and t is the associated minority carrier lifetime.
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The dark current density in any minority carrier detector architecture is determined by the thermal generation rate per unit volume, Jd ¼ qGtht ¼ qNmint/t, where Nmin is the equilibrium density of minority carriers in the detector volume under consideration, and t is the associated minority carrier lifetime.
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Low dark current GaN avalanche photodiodes
IEEE Journal of Quantum Electronics, 2000We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm.
B. Yang +9 more
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Photoconductivity (Dark Current & Photo Current)
Photoconductive crystals have been employed in various photo-detecting devices such as charge coupled devices, photoresistors and infrared-based photonic systems. The dark and photocurrent properties of single crystals grown by the SEST, SR, or other methods were analyzed using a Keithley 485 picoammeter under a DC electric field at room temperature ...B. Sahaya Infant Lasalle +2 more
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Dark current mechanisms in HgCdTe photodiodes
SPIE Proceedings, 1998perimental and theoretical results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg 1 -x Cd x Te ion-implanted p-n junction photodiodes with x≃0.22. By measuring the temperature dependence of the dc characteristics in the temperature range 25-140K, the dark current mechanisms are studied. At high temperature (>90K)
Yan-Kuin Su +5 more
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CURRENT STATUS OF MODERN DARK MATTER PROBLEM
International Journal of Modern Physics A, 2002The basic methods of searching for dark matter candidates are discussed. The main topics of this talk are: (a) ground - based cavity experiments with searching for galactic axions; (b) searching for hadronic axion decay line into galactic and extragalactic light; (c) experimental search for solar and stellar axions; (d) basic methods of searching for ...
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Dark current characterization of photoconductive switches
SPIE Proceedings, 1992Dark current characterization of GaAs photoconductive switches is examined with an emphasis on low frequency current oscillations caused by travelling charge domains in the semiconductor. The voltage controlled negative differential resistance responsible for this phenomenon is due to field enhanced capture of deep level traps and is utilized for ...
Jeff C. Adams +3 more
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