Results 51 to 60 of about 47,639 (261)

Improvement of Near-Infrared Light-Emitting Diodes’ Optical Efficiency Using a Broadband Distributed Bragg Reflector with an AlAs Buffer

open access: yesNanomaterials
This study developed an advanced 850 nm centered distributed Bragg reflector (DBR) (broadband DBR) composed of nanomaterial-based multiple structures to improve the optical efficiency of an 850 nm near-infrared light-emitting diode (NIR-LED).
Hyung-Joo Lee   +3 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Directional Flow of Confined Polaritons in CrSBr

open access: yesAdvanced Materials, EarlyView.
CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak   +10 more
wiley   +1 more source

Cumulative dominance and heuristic performance in binary multi-attribute choice [PDF]

open access: yes, 2005
Working paper 895, Department of Economics and Business, Universitat Pompeu FabraSeveral studies have reported high performance of simple decision heuristics in multi-attribute decision making.
Baucells, M   +2 more
core   +1 more source

22-GHz Modulation Bandwidth of Long Cavity DBR Laser by Using a Weakly Laterally Coupled Grating Fabricated by Focused Ion Beam Lithography [PDF]

open access: yes, 2004
A 22-GHz directly modulated 3-dB bandwidth could be obtained by 1.3-mm-long weakly laterally coupled distributed Bragg reflector lasers fabricated by focused ion beam lithography.
Bach, L.   +6 more
core   +1 more source

Feedback Sensitivity of DBR-Type Laser Diodes [PDF]

open access: yesIEEE Photonics Journal, 2021
It is shown theoretically that the feedback sensitivity of Distributed Bragg Reflector laser diodes with low-loss Bragg section decreases with the length of the Bragg section and also can be decreased by detuning from the Bragg peak. The effect of detuning is not only due to a change in effective linewidth enhancement factor, but also due to a change ...
openaire   +3 more sources

3D Anodic Alumina Nanoarchitectures: A Decade of Progress from Foundational Science to Functional Metamaterials

open access: yesAdvanced Materials, EarlyView.
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley   +1 more source

Novel 1064 nm DBR lasers combining active layer removal and surface gratings

open access: yesElectronics Letters, 2021
The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections
O. Brox   +8 more
doaj   +1 more source

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser [PDF]

open access: yes, 2013
A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors.
Bordel, D   +10 more
core   +2 more sources

Porous Bi2S3 Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting‐Point Metal Volatilization

open access: yesAdvanced Materials, EarlyView.
By introducing FeCoNi medium‐entropy alloy, the bismuth sulfide (Bi2S3) material achieves a record‐high ZT of 1.1 at 773 K, owing to the solid‐states replacement reaction and the volatilization of low melting‐point metal. This strategy is also applicable to other sulfur‐based thermoelectric materials.
Zi‐Yuan Wang   +9 more
wiley   +1 more source

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