Results 211 to 220 of about 860,720 (284)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Biomimetic Nanovaccine Integrating Dendritic Cell Exosomes with Tumor Cell Membranes for Sustained Prophylaxis Against Glioblastoma

open access: yesAdvanced Functional Materials, EarlyView.
We have developed DEX/GM, an all‐natural, personalizable hybrid vaccine designed by coating dendritic cell‐derived exosomes (DEX) onto tumor cell membranes (GM) for sustained prophylaxis against glioblastoma (GBM). ABSTRACT Glioblastoma (GBM), one of the most aggressive and lethal brain tumors, remains incurable with a poor clinical prognosis.
Shanshan Li   +6 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

A new ultra-high voltage gain DC/DC converter based on coupled-inductor. [PDF]

open access: yesSci Rep
Hosseini SJ   +4 more
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

open access: yesAdvanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu   +8 more
wiley   +1 more source

High controllability soft switching step-up DC-DC converter with CI, (QBC) structure and VM technique. [PDF]

open access: yesSci Rep
Behrouzi YG   +5 more
europepmc   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

Three Decades of Outpatient Plastic Surgery Safety: A Review of 42,720 Consecutive Cases

open access: yesPlastic and Reconstructive Surgery, Global Open
Rachel Rohrich, BS   +6 more
doaj   +1 more source

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