Results 121 to 130 of about 4,707 (158)

AlGaN nanowire deep ultraviolet light emitting diodes and lasers

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017
Semiconductor lasers operating in the UV-C band (100–280 nm) are important for a broad range of applications including surface treatment, bio-agent detection and the production of microelectronics and integrated circuits. To date, however, it has remained challenging to achieve electrically injected AlGaN quantum well lasers operating in these ...
Zetian Mi, Songrui Zhao, Xianhe Liu
openaire   +1 more source

Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes

Physics and Simulation of Optoelectronic Devices XXVII, 2019
We investigate the spectral broadening in deep ultraviolet (UV) multi quantum well light emitting diodes (LED) by modeling the emission spectra. Experimental emission spectra of deep UV LEDs exhibit a at tail towards lower energies and a steep decrease towards high energies that cannot be explained by convolution of the spectrum with a broadening ...
Norman Susilo, Michael Kneissl, Martin Guttmann, Tim Wernicke, Friedhard Römer, Bernd Witzigmann   +5 more
openaire   +1 more source

AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

2017
222–351 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) are demonstrated, which have been achieved by the development of crystal growth techniques for wide-bandgap AlN and AlGaN. Significant increases in internal quantum efficiency (IQE) have been achieved for AlGaN quantum well (QW) emissions by introducing low-threading-dislocation
Hideki Hirayama, Norihiko Kamata, Kenji Tsubaki   +2 more
openaire   +1 more source

AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates

ACS Photonics, 2020
The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV–C LEDs).
Burhan K. SaifAddin, Abdullah S. Almogbel, Christian J. Zollner, Feng Wu, Bastien Bonef, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck   +8 more
openaire   +2 more sources

Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes

2015 12th China International Forum on Solid State Lighting (SSLCHINA), 2015
Recently, our group has demonstrated several methods to improve the performance of deep ultraviolet (DUV) LEDs and LDs. A high-quality and crack-free AlN template has been achieved by inserting multiple middle-temperature AlN layers with modulated source flow.
Yanan Guo, Yun Zhang, Junxi Wang, Jianchang Yan, Yingdong Tian, Xiang Chen, Lili Sun, Tongbo Wei, Jinmin Li   +8 more
openaire   +1 more source

Ga2O3-based solar-blind deep ultraviolet light-emitting diodes

Journal of Luminescence, 2020
Abstract Vapor cooling condensation system was used to sequentially deposit i-Ga2O3 and n-Ga2O3:Si films on the p-GaN layer that was grown with a metalorganic chemical vapor deposition system. After it was annealed in a nitrogen ambience at 900 °C for 60 min, the p-GaN/i-Ga2O3/n-Ga2O3:Si structure was utilized to fabricate Ga2O3-based p-i-n solar ...
Chih-Hsun Lin, Ching-Ting Lee
openaire   +1 more source

Cascaded deep ultraviolet light-emitting diode via tunnel junction

Chinese Optics Letters, 2021
The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization.
Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun   +10 more
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Deep Ultraviolet Light Emitting Diode (LED)-Based Sensing of Sulfur Dioxide

Applied Spectroscopy, 2016
With the recent development of deep ultraviolet (DUV) light emitting diodes (LEDs) comes the possibility of targeting absorption bands of several gases, including sulfur dioxide (SO 2 ). SO 2 has strong absorption bands in the 300 nm spectral region ...
Anna P M, Michel, Jason, Kapit
openaire   +2 more sources

High efficiency AlGaN deep ultraviolet light emitting diodes on silicon

SPIE Proceedings, 2015
The performance of conventional Al(Ga)N planar devices decays drastically with increasing Al content, leading to low internal quantum efficiencies (IQEs) and high device operation voltages. In this paper, we show that these challenges can be addressed by utilizing epitaxially grown nitrogen polar (N-polar) Al(Ga)N nanowires.
Zetian Mi, Songrui Zhao, Ashfiqua Connie, Mohammad Hadi Tavakoli Dastjerdi   +3 more
openaire   +1 more source

Large Chip High Power Deep Ultraviolet Light-Emitting Diodes

Applied Physics Express, 2010
Single chip deep ultraviolet light-emitting diodes with junction area up to 1 mm2 were fabricated for high power applications. Lateral geometry devices were designed for low operating voltage, uniform current spreading and emission resulting in substantial improvement of high current performance. The maximum CW optical power of 30 and 6 mW was achieved
Max Shatalov, Wenhong Sun, Yuri Bilenko, Ajay Sattu, Xuhong Hu, Jianyu Deng, Jinwei Yang, Michael Shur, Craig Moe, Michael Wraback, Remis Gaska   +10 more
openaire   +1 more source