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(Invited) Deep Ultraviolet Light Emitting Diodes: Physics, Performance, and Applications

ECS Meeting Abstracts, 2014
Materials quality is the one of the key factors determining the Deep UV LED performance. It could be dramatically improved by using novel MEMOCVD® technique [1] using overlapping precursor pulses, optimized precursor waveforms and lower growth temperatures compared to the conventional MOCVD growth. Another key factor is the Deep UV LED design.
Michael Shur, Remis Gaska, Alex Dobrinsky, M. Shatalov   +3 more
openaire   +1 more source

Effects of optical absorption in deep ultraviolet nanowire light-emitting diodes

Photonics and Nanostructures - Fundamentals and Applications, 2018
Abstract We report our study on the effect of optical absorption in nanowire ultraviolet light-emitting diodes (LEDs) using three-dimensional finite difference time domain simulation. Utilizing nanowire structures can avoid the emission of guided modes inside LED structure and redirect the trapped light into radiated modes.
M. Djavid, D.D. Choudhary, M. Rajan Philip, T.H.Q. Bui, O. Akinnuoye, T.T. Pham, H.P.T. Nguyen   +6 more
openaire   +1 more source

Deep ultraviolet light-emitting diodes and photodetectors for UV communications

SPIE Proceedings, 2005
We present deep UV light-emitting diodes and photodetectors based on high Al-composition AlGaN. We have obtained very short wavelength UV LEDs (
openaire   +1 more source

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

IEEE Journal of Quantum Electronics, 2017
The polarization effect in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated, which is critical for the development of DUV LEDs, because the basal material, epitaxial structure, and polarization characteristics are very distinct to those of the well-developed (In)GaN-based near-ultraviolet and visible light emitters.
Yen-Kuang Kuo, Jih-Yuan Chang, Hui-Tzu Chang, Fang-Ming Chen, Ya-Hsuan Shih, Bo-Ting Liou   +5 more
openaire   +1 more source

Impact of strain on deep ultraviolet nitride laser and light-emitting diodes

Journal of Applied Physics, 2011
To date, the shortest wavelength of an ultraviolet current-injection nitride laser has been limited to ∼340 nm. This begs the question of whether there is a fundamental limitation that restricts the realization of injection lasers below this wavelength. This letter investigates this issue.
T. K. Sharma, E. Towe
openaire   +1 more source

Reliability issues in AlGaN based deep ultraviolet light emitting diodes

2009 IEEE International Reliability Physics Symposium, 2009
AlGaN based deep ultraviolet light emitting diodes (DUV LEDs) are key components in systems for air, water, and food purification and germicidal applications. Because of the heteroepitaxial growth of the DUV LED epilayers on sapphire, they have a large number of dislocations that invariably leads to a reduction of quantum efficiency and lifetime ...
Asif Khan, Seongmo Hwang, Jonathan Lowder, Vinod Adivarahan, Qhalid Fareed   +4 more
openaire   +1 more source

AlGaN-based deep ultraviolet light emitting diodes with reflection layer

SPIE Proceedings, 2007
ABSTRACT We report on the effect of reflection layer on electrical and optical characteristics of AlGaN-based multiple-quantum well deep-UV flip chip light-emitting diodes. Relatively thick Al metal as a reflector layer was deposited on the p-contact of deep-UV LEDs by e-beam evaporat or at a nominal chamber pressure of 2 u 10 -6 mtorr.
M. Khizar, Yaskin M. Akhtar Raja
openaire   +1 more source

Microbicidal effect of deep ultraviolet light-emitting diode irradiation

Lasers in Medical Science, 2020
Tatsuya Takagi, Jun Nishikawa, Masashi Yanagihara, Soichiro Fukuda, Naoto Kubota, Yuki Kobayashi, Ken-ichiro Otsuyama, Junzo Nojima, Hidehiro Tsuneoka, Kohei Sakai, Yutaka Suehiro, Takahiro Yamasaki, Kenji Sakurai, Kazuki Itatani, Isao Sakaida   +14 more
openaire   +2 more sources

AlGaN Polarized Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting Diodes

Nano Letters
Deep ultraviolet light-emitting diodes (DUV-LEDs) are hindered by optical losses and high operating voltages, primarily due to p-contact layers such as light absorption in p-GaN or high operating voltages linked to inferior hole injection caused by high acceptor ionization energy for p-AlGaN and large bulk resistance in AlGaN-based tunneling junctions (
Ziqi Zhang, Shengjun Zhou, Zhefu Liao, Jingjing Jiang, Hansong Geng, Zhenxing Lv, Xu Liu, Shengli Qi, Sheng Liu   +8 more
openaire   +2 more sources

Deep Ultraviolet Light Emitting Diodes with Emission below 300 nm

MRS Proceedings, 2005
AbstractIn this paper we will describe the problems in growth and fabrication of deep UV LED devices and the approaches that we have used to grow AlGaN-based multiple quantum well deep UV LED structures and to overcome issues of doping efficiency, cracking, and slow growth rates both for the n- and the p-type layers of the device structures.
openaire   +1 more source