Results 181 to 190 of about 3,005 (217)

AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates

ACS Photonics, 2020
The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV–C LEDs).
Burhan K. SaifAddin, Abdullah S. Almogbel, Christian J. Zollner, Feng Wu, Bastien Bonef, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck   +8 more
openaire   +2 more sources

Milliwatt power 245 nm deep ultraviolet light-emitting diodes

2009 Device Research Conference, 2009
III-nitride deep III-Nitride based deep ultraviolet (DUV) light emitting diodes (LE Ds) offer many advantages, com pared to traditional UV sources, such as mercury, xenon and deuterium lamps, including sm aller size, a wide choice of peak em ission wavelengths, lower power consumption and reduced cost.
Wenhong Sun, Max Shatalov, Xuhong Hu, Jinwei Yang, Alex Lunev, Yuri Bilenko, Michael Shur, Remis Gaska   +7 more
openaire   +1 more source

Deep Ultraviolet Light Emitting Diode (LED)-Based Sensing of Sulfur Dioxide

Applied Spectroscopy, 2016
With the recent development of deep ultraviolet (DUV) light emitting diodes (LEDs) comes the possibility of targeting absorption bands of several gases, including sulfur dioxide (SO2). SO2 has strong absorption bands in the 300 nm spectral region. The low cost and small size of DUV LEDs, coupled with their spectral coverage, makes them viable sources ...
Anna P M, Michel, Jason, Kapit
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Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes

2015 12th China International Forum on Solid State Lighting (SSLCHINA), 2015
Recently, our group has demonstrated several methods to improve the performance of deep ultraviolet (DUV) LEDs and LDs. A high-quality and crack-free AlN template has been achieved by inserting multiple middle-temperature AlN layers with modulated source flow.
Yanan Guo, Yun Zhang, Junxi Wang, Jianchang Yan, Yingdong Tian, Xiang Chen, Lili Sun, Tongbo Wei, Jinmin Li   +8 more
openaire   +1 more source

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

IEEE Journal of Quantum Electronics, 2017
The polarization effect in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated, which is critical for the development of DUV LEDs, because the basal material, epitaxial structure, and polarization characteristics are very distinct to those of the well-developed (In)GaN-based near-ultraviolet and visible light emitters.
Yen-Kuang Kuo, Jih-Yuan Chang, Hui-Tzu Chang, Fang-Ming Chen, Ya-Hsuan Shih, Bo-Ting Liou   +5 more
openaire   +1 more source

255 nm interconnected micro-pixel deep ultraviolet light emitting diodes

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2005
We report on AlGaN based deep ultraviolet (UV) light emitting diodes (LED) with a micro-pixel design and emission at 255 nm. The micro-pixel design was adopted to improve the lateral current spreading and to reduce the operation voltages. For a 10/spl times/10 interconnected 25 /spl mu/m diameter micro-pixel design the device series resistance as low ...
M.A. Khan, null Shuai Wu, null Wenhong Sun, A. Chitnis, V. Adivarahan, M. Shatalov, null Jinwei Yang   +6 more
openaire   +1 more source

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

Semiconductor Science and Technology, 2018
The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to ...
Jianping Zhang, Ying Gao, Ling Zhou, Young-Un Gil, Kyoung-Min Kim   +4 more
openaire   +1 more source

High efficiency AlGaN deep ultraviolet light emitting diodes on silicon

SPIE Proceedings, 2015
The performance of conventional Al(Ga)N planar devices decays drastically with increasing Al content, leading to low internal quantum efficiencies (IQEs) and high device operation voltages. In this paper, we show that these challenges can be addressed by utilizing epitaxially grown nitrogen polar (N-polar) Al(Ga)N nanowires.
Zetian Mi, Songrui Zhao, Ashfiqua Connie, Mohammad Hadi Tavakoli Dastjerdi   +3 more
openaire   +1 more source

Aluminum nitride deep-ultraviolet light-emitting p–n junction diodes

Diamond and Related Materials, 2008
Abstract This paper reviews our work on aluminum nitride (AlN) p–n junction light-emitting diodes (LEDs). N-type AlN was obtained by Si doping. By reducing dislocation density in n-type Si-doped AlN, we achieved a room-temperature electron mobility of 426 cm 2 V − 1 s − 1 . We analyzed the temperature dependence of the electron mobility and how the
Yoshitaka Taniyasu, Makoto Kasu
openaire   +1 more source

(Invited) Deep Ultraviolet Light Emitting Diodes: Physics, Performance, and Applications

ECS Meeting Abstracts, 2014
Materials quality is the one of the key factors determining the Deep UV LED performance. It could be dramatically improved by using novel MEMOCVD® technique [1] using overlapping precursor pulses, optimized precursor waveforms and lower growth temperatures compared to the conventional MOCVD growth. Another key factor is the Deep UV LED design.
Michael Shur, Remis Gaska, Alex Dobrinsky, M. Shatalov   +3 more
openaire   +1 more source