Results 21 to 30 of about 3,005 (217)

Efficacy of 265-nm ultraviolet light in inactivating infectious SARS-CoV-2

Journal of Photochemistry and Photobiology, 2021
Although, Low-pressure (LP) mercury lamps that emit wavelengths of around 254 nm have been widely applied as ultraviolet (UV) light devices for decontamination of microorganisms, they have raised environmental concerns due to their mercury content ...
Hiroshi Shimoda, Junji Matsuda, Tatsuyuki Iwasaki, Daisuke Hayasaka   +3 more
doaj   +1 more source

Perspectives on UVC LED: Its Progress and Application

Photonics, 2021
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article.
Tsung-Chi Hsu, Yu-Tsai Teng, Yen-Wei Yeh, Xiaotong Fan, Kuo-Hsiung Chu, Su-Hui Lin, Kuo-Kuang Yeh, Po-Tsung Lee, Yue Lin, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo   +11 more
doaj   +1 more source

Nitride deep-ultraviolet light-emitting diodes with microlens array [PDF]

Applied Physics Letters, 2005
We report on the fabrication of 280-nm AlGaN-based deep-ultraviolet light-emitting diodes (UV LEDs) on sapphire substrates with an integrated microlens array. Microlenses with a diameter of 12μm were fabricated on the sapphire substrate by resist thermal reflow and plasma dry etching.
M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, H. X. Jiang   +4 more
openaire   +1 more source

Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes

IEEE Photonics Journal, 2023
Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes.
Liubing Wang, Fujun Xu, Jing Lang, Jiaming Wang, Lisheng Zhang, Xueqi Guo, Chen Ji, Xiangning Kang, Xuelin Yang, Xinqiang Wang, Zhixin Qin, Weikun Ge, Bo Shen   +12 more
doaj   +1 more source

A Novel Liquid Packaging Structure of Deep-Ultraviolet Light-Emitting Diodes to Enhance the Light-Extraction Efficiency

Crystals, 2019
To realize high-efficiency, AlGaN-based, deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency and reducing thermal resistance is very crucial.
Chieh-Yu Kang, Chih-Hao Lin, Tingzhu Wu, Po-Tsung Lee, Zhong Chen, Hao-Chung Kuo   +5 more
doaj   +1 more source

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

IEEE Photonics Journal, 2021
Carrier velocity modulation by asymmetrical concave quantum barriers to improve the performance of AlGaN-based deep-ultraviolet light emitting diodes has been investigated.
J. Lang, F. J. Xu, Y. H. Sun, N. Zhang, J. M. Wang, B. Y. Liu, L. B. Wang, N. Xie, X. Z. Fang, X. N. Kang, Z. X. Qin, X. L. Yang, X. Q. Wang, W. K. Ge, B. Shen   +14 more
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Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

Crystals, 2018
To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional
Yung-Min Pai, Chih-Hao Lin, Chun-Fu Lee, Chun-Peng Lin, Cheng-Huan Chen, Hao-Chung Kuo, Zhi-Ting Ye   +6 more
doaj   +1 more source

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Nanoscale Research Letters, 2018
This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL).
Zi-Hui Zhang, Sung-Wen Huang Chen, Chunshuang Chu, Kangkai Tian, Mengqian Fang, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo   +7 more
doaj   +1 more source

Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

Nanoscale Research Letters, 2022
A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced
Shiqiang Lu, Zongyan Luo, Jinchai Li, Wei Lin, Hangyang Chen, Dayi Liu, Duanjun Cai, Kai Huang, Na Gao, Yinghui Zhou, Shuping Li, Junyong Kang   +11 more
doaj   +1 more source

Counter-intuitive junction temperature behavior in AlGaN-based deep-ultraviolet light-emitting diodes

AIP Advances, 2020
The junction temperature, one of the major parameters that strongly affect the performance of light-emitting diodes (LEDs), increases during operation because of the power dissipated as heat within an LED device.
Dong Yeong Kim, Jeonghyeon Park, Jaehee Cho, Jong Kyu Kim   +3 more
doaj   +1 more source