Results 31 to 40 of about 4,601,669 (267)
Extraction efficiency simulation in deep ultraviolet AlGaN light emitting diodes [PDF]
Optical and Quantum Electronics, 2021 Abstract A ray tracing model is developed to study the light extraction efficiency (LEE) of the nitride wide band gap semiconductor deep ultraviolet light emitting diodes (DUV-LEDs). The basic device structure is flip-chip LED device with dome shape encapsulation.
Qian Fan, Xianfeng Ni, Bing Hua, Xing Gu
openaire +1 more source
Thin-film photonic crystal LEDs with enhanced directionality [PDF]
, 2009 The use of photonic crystals for light extraction from light-emitting diodes (LEDs) gives the possibility to shape the farfield emission pattern. This is of particular interest for étendue-limited LED applications that require a more directional ...
Bergenek, Krister +8 more
core +1 more source
IEEE Photonics Journal, 2023 Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes.
Liubing Wang +12 more
doaj +1 more source
Intra-cavity frequency doubling of an electrically pumped edge-emitting 980 nm laser diode with PPLN [PDF]
, 2009 The growing trend for laser-based projection displays makes intra-cavity frequency doubling (ICFD) of electrically and optically surface emitting diode lasers in the near IR region become more interesting [1-3].
Gawith, C.B.E. +9 more
core +2 more sources
AIP Advances, 2021 Deep ultraviolet light-emitting diodes (DUV LEDs) are promising light sources for disinfection, especially during the pandemic of novel coronavirus (COVID-19). Despite much effort in the development of DUV LEDs, the device temperature and ideality factor
Yanjun Liao +6 more
doaj +1 more source
IEEE Photonics Journal, 2021 Carrier velocity modulation by asymmetrical concave quantum barriers to improve the performance of AlGaN-based deep-ultraviolet light emitting diodes has been investigated.
J. Lang +14 more
doaj +1 more source
Nanoscale Research Letters, 2018 This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL).
Zi-Hui Zhang +7 more
doaj +1 more source
AIP Advances, 2020 The junction temperature, one of the major parameters that strongly affect the performance of light-emitting diodes (LEDs), increases during operation because of the power dissipated as heat within an LED device.
Dong Yeong Kim +3 more
doaj +1 more source
Nanoscale Research Letters, 2022 A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced
Shiqiang Lu +11 more
doaj +1 more source
Surface plasmon polariton modification in top-emitting organic light-emitting diodes for enhanced light outcoupling [PDF]
, 2014 We report on the enhanced light outcoupling efficiency of monochrome top-emitting organic light-emitting diodes (OLEDs). These OLEDs incorporate a hole transport layer (HTL) material with a substantially lower refractive index (∼ 1:5) than the emitter ...
Hofmann, S. +13 more
core +1 more source