Results 1 to 10 of about 24,368 (233)
Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes
Fundamental Research, 2021 AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap.
Dabing Li, Xiaojuan Sun, Fujun Xu
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Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas [PDF]
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
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Opto-Electronic Advances, 2023 Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage. The AlGaN-based deep ultraviolet (DUV) light-emission diode (LED) has high practical potentials because of its ...
Ke Jiang +10 more
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Bezmiâlem Science, 2022 Objective:The aim of this study is to evaluate the efficacy of the Algan Hemostatic Agent (AHA) available in three different physical form (liquid, powder and sponge absorbed) in the femoral artery incision model in rats.Methods:A total of sixty-four 5-7
Hüsamettin EKİCİ +6 more
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Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
Scientific Reports, 2021 Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with
Seung-Hye Baek +3 more
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Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Opto-Electronic Advances, 2020 We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor.
Kumar Kalapala Akhil Raj +8 more
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Effect of the back contact work function on the performance of Al0.1Ga0.9N/CdS/Si solar cell [PDF]
مجلة جامعة الانبار للعلوم الصرفةIn the first phase of this study, a layer of cadmium sulphide (CdS) and a layer of aluminium gallium nitride (Al0.1GaN0.9) was deposited on a silicon substrate (10% AlN with 70% GaN) was deposited on a silicon substrate by using a pulse laser deposition ...
Bashar Saleh
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Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
Cumhuriyet Science Journal, 2018 In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
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Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
Crystals, 2023 This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN
Yusnizam Yusuf +8 more
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Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts
Advances in Electrical and Electronic Engineering, 2016 Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment ...
Jacek Gryglewicz +4 more
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