Results 1 to 10 of about 3,102 (186)
On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes [PDF]
Nanoscale Research Letters, 2018 In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated.
Jiamang Che +7 more
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Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes
Fundamental Research, 2021 AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap.
Fujun Xu, Jinchai Li, Xiaojuan Sun
exaly +3 more sources
Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
Nanomaterials, 2022 The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN.
Yujie Huang +2 more
exaly +3 more sources
Opto-Electronic Advances, 2023 Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage. The AlGaN-based deep ultraviolet (DUV) light-emission diode (LED) has high practical potentials because of its ...
Ke Jiang +10 more
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Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs [PDF]
Scientific Reports, 2017 AbstractSingle crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT).
Tzu-Hsuan Chang +5 more
openaire +3 more sources
Bezmiâlem Science, 2022 Objective:The aim of this study is to evaluate the efficacy of the Algan Hemostatic Agent (AHA) available in three different physical form (liquid, powder and sponge absorbed) in the femoral artery incision model in rats.Methods:A total of sixty-four 5-7
Hüsamettin EKİCİ +6 more
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Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
Scientific Reports, 2021 Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with
Seung-Hye Baek +3 more
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
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Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Opto-Electronic Advances, 2020 We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor.
Kumar Kalapala Akhil Raj +8 more
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Effect of the back contact work function on the performance of Al0.1Ga0.9N/CdS/Si solar cell [PDF]
مجلة جامعة الانبار للعلوم الصرفةIn the first phase of this study, a layer of cadmium sulphide (CdS) and a layer of aluminium gallium nitride (Al0.1GaN0.9) was deposited on a silicon substrate (10% AlN with 70% GaN) was deposited on a silicon substrate by using a pulse laser deposition ...
Bashar Saleh
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