Results 1 to 10 of about 39,461 (213)

Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Nanoscale Research Letters, 2019
In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN
Jiamang Che, Hua Shao, Jianquan Kou, Kangkai Tian, Chunshuang Chu, Xu Hou, Yonghui Zhang, Qian Sun, Zi-Hui Zhang   +8 more
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Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer

IEEE Photonics Journal, 2016
Remarkably enhanced light emission efficiency of AlGaN multiple quantum wells (MQWs) was realized by growing on an n-AlGaN underlying layer (UL). The parasitic peaks emitting from inactive regions can be effectively suppressed, and the nonradiative ...
Lei Li, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa   +3 more
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Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Scientific Reports, 2017
A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure
Feng-Hsu Fan, Zun-Yao Syu, Chia-Jung Wu, Zhong-Jie Yang, Bo-Song Huang, Guan-Jhong Wang, Yung-Sen Lin, Hsiang Chen, Chyuan Hauer Kao, Chia-Feng Lin   +9 more
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Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers

IEEE Photonics Journal, 2013
The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions and AlGaN QW compositions are analyzed. The use of optimized AlGaN-delta-GaN QWs resulted in ~ 7-times increase in material gain over that of conventional ...
Jing Zhang, Nelson Tansu
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A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Crystals, 2023
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts.
Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano   +11 more
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Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

AIP Advances, 2023
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen   +3 more
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The Time Response of a Uniformly Doped Transmission-Mode NEA AlGaN Photocathode Applied to a Solar-Blind Ultraviolet Detecting System

Photonics
Due to the excellent quantum conversion and spectral response characteristics of the AlGaN photocathode, it has become the most promising III-V group semiconductor photocathode in solar-blind signal photoconversion devices in the ultraviolet band. Herein,
Jinjuan Du, Xiyao Li, Tiantian Jia, Hongjin Qiu, Yang Li, Rui Pu, Quanchao Zhang, Hongchang Cheng, Xin Guo, Jiabin Qiao, Huiyang He   +10 more
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Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer

IEEE Photonics Journal, 2023
AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs,
Hongchang Tao, Shengrui Xu, Yanrong Cao, Huake Su, Yuan Gao, Yachao Zhang, Jincheng Zhang, Yue Hao   +7 more
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Selective Photosensitive Structures Based On Au-Algan Schottky Barrier

Известия высших учебных заведений России: Радиоэлектроника, 2016
Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier ...
A. S. Evseenkov, I. A. Lamkin, I. I. Mikhailov, A. V. Solomonov, S. A. Tarasov   +4 more
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Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

IEEE Journal of the Electron Devices Society, 2019
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning.
J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang   +7 more
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