Phonon plasmon interaction in ternary group-III-nitrides [PDF]
, 2012 This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett.
Hoffmann, Axel +4 more
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IEEE Photonics Journal, 2021 Herein, we investigate the influence of an AlGaN metasurface on AlGaN-based deep-ultraviolet light-emitting diodes' light-extraction efficiency by utilizing the 3D finite-difference time-domain method.
Joosun Yun, Hideki Hirayama
doaj +1 more source
Insights Into the Two-Dimensional MoS2 Grown on AlGaN(GaN) Substrates by CVD Method
IEEE Photonics Journal, 2021 Two-dimensional (2D) MoS2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS2-AlGaN(GaN) heterostructures were formed. The MoS2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers,
Guofeng Yang +8 more
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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
APL Photonics, 2023 Microcavity polaritons are strongly interacting hybrid light–matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature.
Delphan, A. +9 more
openaire +4 more sources
A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
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Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer [PDF]
, 2019 AlxGa1-xN/GaN superlattice electron blocking layers (EBLs) with gradually decreasing Al composition toward the p-type GaN layer are introduced to GaInN-based high-power light-emitting diodes (LEDs).
David Meyaard +8 more
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Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well [PDF]
, 2005 A design for a GaN/AlGaN optically pumped terahertz laser emitting at 34 µm (ΔE~36 meV) is presented. This laser uses a simple three-level scheme where the depopulation of the lower laser level is achieved via resonant longitudinal-optical-phonon ...
Harrison, P. +5 more
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Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
, 2015 Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid ...
Akyol, Fatih +8 more
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AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
, 2019 To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable.
Hatui, Nirupam +6 more
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