Results 41 to 50 of about 26,376 (228)

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

The Time Response of a Uniformly Doped Transmission-Mode NEA AlGaN Photocathode Applied to a Solar-Blind Ultraviolet Detecting System

Photonics
Due to the excellent quantum conversion and spectral response characteristics of the AlGaN photocathode, it has become the most promising III-V group semiconductor photocathode in solar-blind signal photoconversion devices in the ultraviolet band. Herein,
Jinjuan Du, Xiyao Li, Tiantian Jia, Hongjin Qiu, Yang Li, Rui Pu, Quanchao Zhang, Hongchang Cheng, Xin Guo, Jiabin Qiao, Huiyang He   +10 more
doaj   +1 more source

Multispectral UV Imaging on Capacitive CMOS Arrays Enabled by Solution‐Processed Metal‐Oxide Nanoparticles

Advanced Science, EarlyView.
Ultraviolet (UV) imagers are important for a variety of applications but often require dedicated semiconductor process flows. Here, a versatile capacitive CMOS platform is transformed into a visible‐blind, multispectral UV imager through post‐CMOS functionalization with solution‐processed metal‐oxide nanoparticles. The UV‐induced photodielectric effect
Suman Kundu, Tao Shen, Kai Betlem, Murali K. Ghatkesar, Peter G. Steeneken, Frans P. Widdershoven   +5 more
wiley   +1 more source

Процессы образования дефектов, формирующих глубоких уровни в структурах SiON/AlGaN/GaN

, 2023
The effect on the electrical parameters of the SiON/AlGaN/GaN structures of treatment of different durations of low-energy nitrogen plasma was studied.
И. А. Михайлов, K. L. Еnisherlova, Л. А. Сейдман, I. A. Mikhaylov, Yu. V. Kolkovsky, Е. П. Кириленко, L. A. Seidman, E. P. Kirilenko, К. Л. Енишерлова, Ю. В. Колковский   +9 more
core   +1 more source

Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]

Journal of Applied Physics, 2003
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S, Keller, S, Wu, Y, Speck, J S, DenBaars, S P, Mishra, U K   +5 more
openaire   +2 more sources

Self‐Sustaining Sensing Systems: Integration Strategies and Signal–Power Matching in Energy‐Harvesting Electronics

Advanced Science, EarlyView.
Energy‐harvesting‐integrated sensors couple ambient energy conversion with sensing, processing, and wireless communication. This review organizes recent progress through integration architectures and operating principles, revisiting co‐packaged, monolithic, and co‐functional designs together with always‐on, event‐driven, and multi‐modal sensing modes ...
Taehyun Park, Ki‐Yoon Park, Yeonho Choi, Dong‐Myeong Shin, Hong‐Joon Yoon, Hocheon Yoo   +5 more
wiley   +1 more source

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Crystals, 2023
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts.
Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano   +11 more
doaj   +1 more source

Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect

Nanoscale Advances, 2023
A convenient and stable strategy is proposed to optimize the contact characteristics of metal/n-AlGaN by introducing a heterostructure with a polarization effect and etching a recess structure through the heterostructure beneath the contact metal.
Yuxuan Chen, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Shanli Zhang, Jianwei Ben, Bingxiang Wang, Long Guo, Dabing Li   +8 more
openaire   +2 more sources

A Generalizable Framework for Building Executable Domain‐Specific Large Language Models Under Data Scarcity: Demonstration on Semiconductor Technology Computer‐Aided Design Simulation

Advanced Intelligent Systems, EarlyView.
A schema‐first alignment framework builds compact, executable domain‐specific language models under data scarcity. Large‐scale synthetic question‐answer generation instills domain knowledge, and a code‐centric IR‐to‐DPO pipeline aligns generation with tool‐executable syntax.
Di Wang, Zhenhua Wu, Yu Liu, Kai Chang, Shaohua Wu   +4 more
wiley   +1 more source

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

AIP Advances, 2023
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen   +3 more
doaj   +1 more source