Results 41 to 50 of about 3,102 (186)
Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
IEEE Journal of the Electron Devices Society, 2019 We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning.
J. He +7 more
doaj +1 more source
Micromachines, 2020 In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu +2 more
doaj +1 more source
An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers
Advanced Physics Research, EarlyView.A universal epitaxial strategy overcomes the long‐standing limitation of insulating buffers in GaN‐on‐Silicon technology. By exploiting a unique amorphous‐like interlayer (AL‐IL) formed via ultrathin metal pre‐deposition, high‐quality GaN films with excellent vertical conductivity are realized on silicon wafers.
Fumio Kawamura +2 more
wiley +1 more source
Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices [PDF]
2017 12th European Microwave Integrated Circuits Conference (EuMIC), 2017 The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model.
Ahmeda, K +6 more
openaire +1 more source
Materials Research Express, 2021 The non-polar a -AlGaN epitaxial film was successfully grown on the semi-polar r- sapphire substrate by metal-organic chemical vapor deposition technique.
Abbas Nasir +5 more
doaj +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.In this study, a series of highly permeable CeO2 porous hollow microspheres with multilevel gas channels and tunable pore sizes were first prepared via the hydrothermal method, achieving rapid response and fast recovery to ammonia gas. Fast response and recovery performance is highly significant for real‐time monitoring of NH3 gas due to the toxic and ...
Mengke Li +11 more
wiley +1 more source
Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect
Nanoscale Advances, 2023 A convenient and stable strategy is proposed to optimize the contact characteristics of metal/n-AlGaN by introducing a heterostructure with a polarization effect and etching a recess structure through the heterostructure beneath the contact metal.
Yuxuan Chen +8 more
openaire +2 more sources
Advances in Condensed Matter Physics, 2015 The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering.
Yanli Liu +5 more
doaj +1 more source
Information &Functional Materials, EarlyView.This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
Bio‐inspired nanophotonics: Structural color, chirality, and resonance metasurfaces
InfoMat, EarlyView.A butterfly‐wing‐inspired anisotropic plasmonic flatband resonant metasurface. Insets, photo of the butterfly, Sasakia charonda, and the SEM image of its wing scale (above); the SEM image of the metasurface (below). Abstract The dazzling colors of butterfly wings and hummingbird feathers are not painted with pigments, but crafted by nature's invisible ...
Weihan Liu, Yao Liang, Din Ping Tsai
wiley +1 more source