Results 41 to 50 of about 24,368 (233)

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer

IEEE Photonics Journal, 2023
AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs,
Hongchang Tao, Shengrui Xu, Yanrong Cao, Huake Su, Yuan Gao, Yachao Zhang, Jincheng Zhang, Yue Hao   +7 more
doaj   +1 more source

Thermal Enhancement of TADF‐OLED Performance: Size of Active Area Matters

Advanced Materials Interfaces, EarlyView.
Large‐area TADF‐based OLEDs can be used as thermally assisted light‐emitting devices, in which moderate waste heat can partially compensate for efficiency losses associated with increasing active area. ABSTRACT Temperature significantly impacts the performance of light‐emitting diodes, typically causing degradation as they heat up. However, OLEDs using
Demyd V. Pekur, Denis M. Khmil, Petro S. Smertenko, Alexander N. Fedoryak, Chih‐Hung Ko, Chih‐Hao Chang, Dovydas Blazevicius, Gintare Krucaite, Saulius Grigalevicius, Oleg P. Dimitriev   +9 more
wiley   +1 more source

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Crystals, 2023
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts.
Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano   +11 more
doaj   +1 more source

Intrinsic Dual‐Phase Regulated GeSe2 Nanoparticles Triggered by Ball‐Milling Treatment for Photonic Multi‐Valued Logic Circuits

Advanced Science, EarlyView.
We report the solid‐state ball milling, a traditional, reliable, mass‐productive material processing, to prepare the air‐stable and dual‐phase GeSe2‐x nanoparticles with extended photodetection feasibility toward optical‐wavelength regions. We further display photonic multi‐valued logic (MVL) circuit through the employment of a hybrid PMMA/GeSe2‐x ...
An‐Ting Tsai, Chun‐Jen Wang, Pin‐Chao Liao, Chin Shan Lue, Chia‐Nung Kuo, Le Vo Phuong Thuan, Po‐Hsuan Hsiao, Chang‐Hyun Kim, Chia‐Yun Chen   +8 more
wiley   +1 more source

Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect

Nanoscale Advances, 2023
A convenient and stable strategy is proposed to optimize the contact characteristics of metal/n-AlGaN by introducing a heterostructure with a polarization effect and etching a recess structure through the heterostructure beneath the contact metal.
Yuxuan Chen, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Shanli Zhang, Jianwei Ben, Bingxiang Wang, Long Guo, Dabing Li   +8 more
openaire   +2 more sources

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

AIP Advances, 2023
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen   +3 more
doaj   +1 more source

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

Selective Photosensitive Structures Based On Au-Algan Schottky Barrier

Известия высших учебных заведений России: Радиоэлектроника, 2016
Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier ...
A. S. Evseenkov, I. A. Lamkin, I. I. Mikhailov, A. V. Solomonov, S. A. Tarasov   +4 more
doaj  

Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

IEEE Journal of the Electron Devices Society, 2019
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning.
J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang   +7 more
doaj   +1 more source