Results 51 to 60 of about 39,461 (213)
Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties [PDF]
This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction ...
Chung, T. F. +7 more
core +3 more sources
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
The development of polarization‐sensitive ultraviolet photodetectors is limited by poor heterojunction quality and low polarization sensitivity. This study integrates synthesized CsAg2I3 single crystals with intrinsic non‐centrosymmetry into van der Waals heterojunction devices, demonstrating pronounced pyro‐phototronic effect.
Yalin Zhai +9 more
wiley +1 more source
Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume
A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang +7 more
wiley +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125°C [PDF]
The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures.
Akram, R., Dede, M., Oral, Ahmet
core +2 more sources
In this study, a series of highly permeable CeO2 porous hollow microspheres with multilevel gas channels and tunable pore sizes were first prepared via the hydrothermal method, achieving rapid response and fast recovery to ammonia gas. Fast response and recovery performance is highly significant for real‐time monitoring of NH3 gas due to the toxic and ...
Mengke Li +11 more
wiley +1 more source
Microscopic origin of light emission in Al_yGa_{1-y}N/GaN superlattice: Band profile and active site [PDF]
We present first-principles calculations of AlGaN/GaN superlattice, clarifying the microscopic origin of the light emission and revealing the effect of local polarization within the quantum well.
Cai, D. J. +3 more
core +2 more sources
Bio‐inspired nanophotonics: Structural color, chirality, and resonance metasurfaces
A butterfly‐wing‐inspired anisotropic plasmonic flatband resonant metasurface. Insets, photo of the butterfly, Sasakia charonda, and the SEM image of its wing scale (above); the SEM image of the metasurface (below). Abstract The dazzling colors of butterfly wings and hummingbird feathers are not painted with pigments, but crafted by nature's invisible ...
Weihan Liu, Yao Liang, Din Ping Tsai
wiley +1 more source
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu +2 more
doaj +1 more source

