Results 51 to 60 of about 26,376 (228)

Recent advances in flexible optoelectronic synapses: Mechanisms, materials, and neuromorphic applications

FlexMat, EarlyView.
Flexible optoelectronic synapses integrate sensing, memory, and computation within mechanically compliant devices. This review summarizes their neuromorphic mechanisms and recent advances in diverse material platforms, emphasizing stability challenges under coupled optical, electrical, mechanical, and environmental stresses.
Yingjie Li, Yuyi Feng, Daquan Yang, Wenqiang Yang, Rui Su, Meicheng Li, Caofeng Pan   +6 more
wiley   +1 more source

Selective Photosensitive Structures Based On Au-Algan Schottky Barrier

Известия высших учебных заведений России: Радиоэлектроника, 2016
Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier ...
A. S. Evseenkov, I. A. Lamkin, I. I. Mikhailov, A. V. Solomonov, S. A. Tarasov   +4 more
doaj  

Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

IEEE Journal of the Electron Devices Society, 2019
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning.
J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang   +7 more
doaj   +1 more source

Quasi‐2D perovskite memristors: From layered structures to advanced computing applications

InfoScience, EarlyView.
Quasi‐2D perovskites enable stable memristive switching through dimensional engineering that controls ion migration pathways. The layered structure suppresses leakage, improves environmental stability, and enables analog conductance modulation for neuromorphic computing, artificial vision, and in‐memory architectures, transforming ion migration from a ...
Jie Ma, Yujian Du, Yuljae Cho
wiley   +1 more source

GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector

, 2017
A GaN/AlGaN-based ultraviolet light-emitting diode (LED) structure with an embedded porous-AlGaN reflector was fabricated by a doping-selective electrochemical (EC) wet-etching process. The n+-AlGaN/undoped-AlGaN (u-AlGaN) stack structures with different
Zhong-Jie Yang, Bo-Syun Hong, Yung-Sen Lin, Guan-Jhong Wang, 林佳鋒, Yi-Yun Chen, Tzong-Liang Tsai, Chia-Feng Lin   +7 more
core   +1 more source

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Micromachines, 2020
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu, Shun-Wei Tang, Hong-Jia Jiang   +2 more
doaj   +1 more source

Enhanced crystalline quality of non-polar a-plane AlGaN epitaxial film grown with Al-composition-graded AlGaN intermediate layer

Materials Research Express, 2021
The non-polar a -AlGaN epitaxial film was successfully grown on the semi-polar r- sapphire substrate by metal-organic chemical vapor deposition technique.
Abbas Nasir, Xiong Zhang, Liang Lu, Jin Zhang, Jiadong Lyu, Yiping Cui   +5 more
doaj   +1 more source

Programmable solar‐blind ultraviolet sensors enabling integrated single‐pixel sensing and neuromorphic processing

InfoMat, EarlyView.
A Schottky photodiode based on (Al0.14Ga0.86)2O3 was developed, in which the sensing and processing functions were temporally decoupled through bias voltage modulation. By integrating single‐pixel imaging with a reservoir computing architecture, a comprehensive intelligent vision system was constructed.
Hongbin Wang, Zhuangzhuang Li, Zhongshi Ju, Cheng Zhou, Peng Li, Lizhi Ding, Jiangang Ma, Zhongqiang Wang, Ya Lin, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array

, 2017
Poor light extraction efficiency (LEE) has been one of the major challenges responsible for the low external quantum efficiency of AlGaN-based ultraviolet light emitting Diodes (UV-LEDs).
Chee, Kuan W. A., Yang, Zhenhai, Zhenhai Yang, Junxi Wang, Jichun Ye, Kuan W. A. Chee, Pingqi Gao, Xi Yang, Zhang, Yun, Junmei Li, Wei Guo, Guo, Wei, Gao, Pingqi, Wang, Junxi, Li, Junmei, Yang, Xi, Ye, Jichun, Yun Zhang   +17 more
core   +1 more source

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices [PDF]

2017 12th European Microwave Integrated Circuits Conference (EuMIC), 2017
The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model.
Ahmeda, K, Ubochi, B, Kalna, K, Benbakhti, B, Duffy, SJ, Zhang, WD, Soltani, A   +6 more
openaire   +1 more source