Results 51 to 60 of about 24,368 (233)
Advanced Science, EarlyView.Ultraviolet (UV) imagers are important for a variety of applications but often require dedicated semiconductor process flows. Here, a versatile capacitive CMOS platform is transformed into a visible‐blind, multispectral UV imager through post‐CMOS functionalization with solution‐processed metal‐oxide nanoparticles. The UV‐induced photodielectric effect
Suman Kundu +5 more
wiley +1 more source
Ebeveynini kaybetmiş evli bireylerde evlilik doyumunun aile işlevselliği açısından açıklanması [PDF]
, 2018 Bu araştırmanın amacı ebeveynini kaybetmiş olan evli bireylerde aile işlevselliğinin evlilik doyumu ile ilişkisinin incelenmesidir. Çalışmanın örneklemini, Batman’da yaşayan evlilik öncesi ya da sonrasında ebeveynlerinden birini kaybetmiş 103 erkek, 134 ...
Algan, Coşkun
core +1 more source
Micromachines, 2020 In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu +2 more
doaj +1 more source
Materials Research Express, 2021 The non-polar a -AlGaN epitaxial film was successfully grown on the semi-polar r- sapphire substrate by metal-organic chemical vapor deposition technique.
Abbas Nasir +5 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.Post‐annealing atmosphere and temperature are optimized to regulate oxygen‐related defect states in solution‐processed Ga2O3 films. The optimized H2/N2 annealing enables enhanced photoconductive gain while maintaining low dark current, leading to high‐performance solar‐blind photodetectors with a responsivity of 7.5 × 102 A W−1 under 254 nm ...
Shiqi Yan +10 more
wiley +1 more source
Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices [PDF]
2017 12th European Microwave Integrated Circuits Conference (EuMIC), 2017 The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model.
Ahmeda, K +6 more
openaire +1 more source
L'Etat en mode start-up: Le nouvel âge de l'action publique
, 2016 L'action publique semble aujourd'hui faire face à une équation impossible, entre réduction des moyens et multiplication des mécontentements. Les approches traditionnelles de la réforme sont mises en échec.
Algan, Yann, Cazenave, Thomas
core +4 more sources
Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices
Advanced Electronic Materials, EarlyView.Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye +6 more
wiley +1 more source
Molecular‐Level Modulation of Proton Transport via Electron‐Proton Coupling in Bio‐p‐n Junctions
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.We developed a pH‐sensing device capable of operating in biological environments. A biohybrid p–n junction was constructed using bacteriorhodopsin (bR) and the photoconductive polymer poly(3‐hexylthiophene) (P3HT). Under light illumination, the photocurrent exhibits distinct transitions across various pH gradients, demonstrating the system's high ...
Chen Song +7 more
wiley +1 more source
Advances in Condensed Matter Physics, 2015 The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering.
Yanli Liu +5 more
doaj +1 more source