Results 1 to 10 of about 8,247 (230)

Enhanced Carrier Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

IEEE Photonics Journal, 2022
The external quantum efficiency (EQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) is still far from satisfactory due to the main issues of electron leakage and insufficient hole injection.
Mengran Liu, Chao Liu
doaj   +1 more source

III-Nitride Deep UV LED Without Electron Blocking Layer

IEEE Photonics Journal, 2019
AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as ...
Zhongjie Ren, Yi Lu, Hsin-Hung Yao, Haiding Sun, Che-Hao Liao, Jiangnan Dai, Changqing Chen, Jae-Hyun Ryou, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaohang Li   +11 more
doaj   +1 more source

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond [PDF]

, 2014
Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that
Cermak, J., Koide, Y., Rezek, Bohuslav, Takeuchi, D.   +3 more
core   +1 more source

Progress in semiconductor diamond photodetectors and MEMS sensors

Functional Diamond, 2022
Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily superior to those of the currently available wide-bandgap semiconductors for deep-ultraviolet (DUV) photoelectronics and microelectromechanical systems (MEMS).
Meiyong Liao
doaj   +1 more source

Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Light: Science & Applications, 2022
This work successfully achieves a strain-free AlN film with low dislocation density for DUV-LED through graphene-driving strain-pre-store engineering and present the unique mechanism of strain-relaxation in QvdW epitaxy.
Hongliang Chang, Zhetong Liu, Shenyuan Yang, Yaqi Gao, Jingyuan Shan, Bingyao Liu, Jingyu Sun, Zhaolong Chen, Jianchang Yan, Zhiqiang Liu, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Tongbo Wei   +14 more
doaj   +1 more source

On the UV dimensions of Loop Quantum Gravity [PDF]

, 2016
Planck-scale dynamical dimensional reduction is attracting more and more interest in the quantum-gravity literature since it seems to be a model independent effect.
Ronco, Michele
core   +3 more sources

Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

, 2019
We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond.
Dorfer, C., Hits, D., Kasmi, L., Kramberger, G., Lucchini, M., Mikuz, M., Wallny, R.   +6 more
core   +1 more source

Average distance in a hierarchical scale-free network: an exact solution

, 2009
Various real systems simultaneously exhibit scale-free and hierarchical structure. In this paper, we study analytically average distance in a deterministic scale-free network with hierarchical organization.
Jihong Guan, Rozenfeld H D, Shuigeng Zhou, Shuyang Gao, Yuan Lin, Zhang Z Z, Zhang Z Z, Zhang Z Z, Zhang Z Z, Zhongzhi Zhang   +9 more
core   +1 more source

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

IEEE Photonics Journal, 2019
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) grown on c-plane substrates.
Huabin Yu, Qian Chen, Zhongjie Ren, Meng Tian, Shibing Long, Jiangnan Dai, Changqing Chen, Haiding Sun   +7 more
doaj   +1 more source

Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode

IEEE Photonics Journal
Aluminium Gallium Nitride (AlGaN) based light emitting diodes (LED) are the enabling technology for compact emitters of deep ultraviolet (DUV) radiation and are in high demand for environmental and medical applications.
Friedhard Romer, Gregor Hofmann, Jakob Hopfner, Marcel Schilling, Anton Muhin, Tim Wernicke, Michael Kneissl, Bernd Witzigmann   +7 more
doaj   +1 more source