Results 41 to 50 of about 2,177,698 (204)
AIP Advances, 2022 Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused ...
Fengyi Zhao +7 more
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IEEE Photonics Journal, 2020 In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work.
Chunshuang Chu +7 more
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Crystals, 2022 Planar, nanopillar and Al nanosphere structure AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were numerically investigated via a three-dimensional finite difference time domain (3D FDTD) method.
Xiaolong Hu +3 more
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Advanced Materials, EarlyView.We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju +9 more
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Micromachines, 2022 The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy.
Seungyoung Lim +6 more
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Advanced Materials, EarlyView.Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh +5 more
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IEEE Photonics Journal, 2022 The external quantum efficiency (EQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) is still far from satisfactory due to the main issues of electron leakage and insufficient hole injection.
Mengran Liu, Chao Liu
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Controlled Growth of Boron Nitride in Various Phases
Advanced Materials Interfaces, EarlyView.Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu +6 more
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III-Nitride Deep UV LED Without Electron Blocking Layer
IEEE Photonics Journal, 2019 AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as ...
Zhongjie Ren +11 more
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Advanced Materials Technologies, EarlyView.An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob +4 more
wiley +1 more source