Results 41 to 50 of about 1,029 (198)

High-Efficiency and High-Reliability Deep-UV Light-Emitting Diodes Using Transparent Ni-Implanted AlN Ohmic Electrodes

IEEE Access, 2021
Significant efforts have been devoted to improve the external quantum efficiency (EQE) of AlGaN-based top-emitting deep-UV light-emitting diodes (DUV LEDs).
Tae Hoon Park, Kyung Rock Son, Hideki Hirayama, Tae Geun Kim   +3 more
doaj   +1 more source

Rapid inactivation of SARS-CoV-2 with deep-UV LED irradiation

Emerging Microbes and Infections, 2020
The spread of novel coronavirus disease 2019 (COVID-19) infections worldwide has raised concerns about the prevention and control of SARS-CoV-2. Devices that rapidly inactivate viruses can reduce the chance of infection through aerosols and contact ...
Hiroko Inagaki, Akatsuki Saito, Hironobu Sugiyama, Tamaki Okabayashi, Shouichi Fujimoto   +4 more
doaj   +1 more source

Characteristics of collection and inactivation of virus in air flowing inside a winding conduit equipped with 280 nm deep UV-LEDs

Environment International, 2022
A general-purpose virus inactivation unit that can inactivate viruses was developed using deep ultraviolet (DUV) LEDs that emit DUV rays with a wavelength of 280 nm.
Kotaro Takamure, Yasuaki Sakamoto, Yasumasa Iwatani, Hiroshi Amano, Tetsuya Yagi, Tomomi Uchiyama   +5 more
doaj   +1 more source

Subjective preference of light colour and LED lighting [PDF]

, 2015
The main objective of this work is to investigate the subjective preferences for lighting environments under different LED spectral power distributions (SPDs) and to analyse the different existing colour quality descriptors in order to recommend the best
Dangol, Rajendra
core   +1 more source

Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer

AIP Advances, 2022
Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused ...
Fengyi Zhao, Wei Jia, Hailiang Dong, Zhigang Jia, Tianbao Li, Chunyan Yu, Zhuxia Zhang, Bingshe Xu   +7 more
doaj   +1 more source

A dimmable LED light source along the Planckian locus. [PDF]

iScience
Summary: Multiple channels are designed for dimmable LED light sources with color temperatures ranging from 2,700 to 6,500 K. However, issues such as Delta uv (Duv) values
Du Y, Zhao L, Zhang R, Zhang Y.
europepmc   +2 more sources

Enhancing Both TM- and TE-Polarized Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diode via Air Cavity Extractor With Vertical Sidewall

IEEE Photonics Journal, 2018
In this work, we investigate the effect of sidewall angle, height and space of an air cavity extractor (AC-Extractor) on the polarization-dependent light extraction efficiency (LEE) for AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using ...
Yonghui Zhang, Yuxin Zheng, Ruilin Meng, Ce Sun, Kangkai Tian, Chong Geng, Zi-Hui Zhang, Guoxu Liu, Wengang Bi   +8 more
doaj   +1 more source

On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes

IEEE Photonics Journal, 2020
In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work.
Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Hao-Chung Kuo   +7 more
doaj   +1 more source

Enhanced Light Extraction Efficiency and Modulation Bandwidth of Deep-Ultraviolet Light-Emitting Diodes with Al Nanospheres

Crystals, 2022
Planar, nanopillar and Al nanosphere structure AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were numerically investigated via a three-dimensional finite difference time domain (3D FDTD) method.
Xiaolong Hu, Xu Liang, Lingyun Tang, Wenjie Liu   +3 more
doaj   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source