Results 51 to 60 of about 4,806,914 (197)
Dynamic Fluorescence Modulation via Light‐Driven Competitive Protonation
Advanced Optical Materials, EarlyView.A two‐component molecular system demonstrates reversible, light‐driven fluorescence write–erase cycling and thermal imaging. Illumination of a merocyanine photoacid transfers a proton to a highly efficient fluorescent pyridinium dye, switching its emission color; thermal relaxation reverses the process in the dark.
Serena X. Liu +10 more
wiley +1 more source
Micromachines, 2022 The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy.
Seungyoung Lim +6 more
doaj +1 more source
Advanced Science, EarlyView.A gentle internal corrugation layer conformally reshapes the microcavity OLED stack, redistributing confined optical power toward extractable channels while preserving cavity‐controlled emission. Combined with optical clear resin and a resonance‐matched narrowband pTSF emissive system, this cavity‐compatible architecture delivers an external quantum ...
Young Rok Kim +2 more
wiley +1 more source
IEEE Photonics Journal, 2022 The external quantum efficiency (EQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) is still far from satisfactory due to the main issues of electron leakage and insufficient hole injection.
Mengran Liu, Chao Liu
doaj +1 more source
High‐Efficiency InGaP‐on‐Insulator Microresonator Nonlinear Conversion and Entanglement Generation
Advanced Science, EarlyView.Sulfur treatment of InGaP‐on‐Insulator (InGaP‐OI) significantly reduces surface roughness, passivates surface states, and lowers propagation loss at visible wavelengths, enabling efficient nonlinear frequency conversion and photon‐pair generation.
Xuefeng Li +11 more
wiley +1 more source
III-Nitride Deep UV LED Without Electron Blocking Layer
IEEE Photonics Journal, 2019 AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as ...
Zhongjie Ren +11 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner +11 more
wiley +1 more source
Progress in semiconductor diamond photodetectors and MEMS sensors
Functional Diamond, 2022 Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily superior to those of the currently available wide-bandgap semiconductors for deep-ultraviolet (DUV) photoelectronics and microelectromechanical systems (MEMS).
Meiyong Liao
doaj +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.A “two‐in‐one” design strategy integrating guanidinium and carboxyl functional groups was developed to overcome the intrinsic trade‐off among SHG response, ultraviolet cutoff edge, and birefringence in DUV NLO crystals. Benefiting from non‐π‐conjugated electronic isolation, Zn‐GPA(II) simultaneously achieves a strong SHG response (2.1 × KH2PO4), an ...
Xiliang Jiang +8 more
wiley +1 more source
User acceptance studies for LED office lighting: light spectrum and correlated colour temperature [PDF]
, 2015 During the last decade, lighting technology based on light-emitting diodes (LEDs) has advanced rapidly and is paving the way for the application of LED lighting in offices. Two experiments were carried out to study user preference for different LED light
Islam, Mohammad Shahidul
core +1 more source