Results 61 to 70 of about 2,177,698 (204)

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

open access: yesIEEE Photonics Journal, 2019
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) grown on c-plane substrates.
Huabin Yu   +7 more
doaj   +1 more source

Phase Engineering of Plasma‐Enhanced Atomic Layer Deposited Molybdenum Disulfide Using High Accuracy Direct Writing With Focused Li+ and Ga+ Ion Beams and Ultrashort Pulse Laser

open access: yesSmall, EarlyView.
In the context of phase heterostructures on two‐dimensional materials, a high‐precision direct writing approach is employed. This involves using a focused ion beam to transform molybdenum disulfide to the metallic 1T phase, followed by retransformation via ultrashort pulse laser processing.
Marvin Krüner   +8 more
wiley   +1 more source

Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED

open access: yes, 2022
We report on the illustration of the novel electron blocking layer (EBL) free AIlnN nanowire light-emitting diodes (LED) with a single-quantum well (SQW) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm).
Das, Samadrita   +4 more
core   +1 more source

Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs

open access: yesAIP Advances
Aiming to enhance the internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the active region based on the V-shaped quantum well (QW) and the electron-blocking layer (EBL) structure are jointly optimized ...
Jinglei Wang   +8 more
doaj   +1 more source

Synthesis of a waterproof geopolymer adhesive applied in DUV LEDs packaging

open access: yesCeramics International
This paper presents the synthesis of a waterproof geopolymer based on the modification of silicon phosphate (Si3(PO4)4) that adheres to alumina and quartz glass substrate, which can replace traditional organic polymers for packaging deep-ultraviolet light-emitting diodes.
Qinglei Sun   +6 more
openaire   +2 more sources

Microfluidic Sample Compartmentalization for Biomolecular Concentration Quantification Using a Nanopore Sensor

open access: yesSmall Methods, EarlyView.
We compartmentalize samples into picoliter volumes using a microfluidic device, allowing us to determine biomolecular concentration by counting molecules to depletion within a known volume without calibration. By integrating a nanopore sensor for this counting process, we also obtain real‐time data on the size, shape, and conformation of each ...
Morteza Safari   +5 more
wiley   +1 more source

Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode

open access: yesIEEE Photonics Journal
Aluminium Gallium Nitride (AlGaN) based light emitting diodes (LED) are the enabling technology for compact emitters of deep ultraviolet (DUV) radiation and are in high demand for environmental and medical applications.
Friedhard Romer   +7 more
doaj   +1 more source

Integrating Chemical, Electrical, and Photonic Effects Into a Unified ETOP‐Based Plasma Dose Framework

open access: yesHigh Voltage, EarlyView.
ABSTRACT In plasma medicine and biological applications, plasmas typically deliver a complex combination of reactive chemical species and multiple physical energy components. However, establishing a unified and comparable dose metric to characterise their integrated biological effects remains a major challenge that continues to limit progress in this ...
Erqi Wu   +5 more
wiley   +1 more source

Planar Compound Eye Lens for Enhanced Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet LEDs

open access: yesAdvanced Photonics Research
Total internal reflection prevents photons from escaping deep‐ultraviolet (DUV) LED, resulting in serious energy waste and reduced service life.
Qilong Tan   +8 more
doaj   +1 more source

Device Simulation of Hole Transport in 233 nm Multiquantum Well AlGaN‐Based UV LED

open access: yesphysica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Deep‐UV LEDs suffer from low hole injection efficiency. In this work, electro optical simulations of AlGaN DUV LEDs with 6, 12, and 21 quantum wells, emitting at 233 nm, reveal efficient inter‐well hole transport within the active multiple quantum well region. The data are consistent with experimental findings.
Ibrahim Marouf   +8 more
wiley   +1 more source

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