Results 81 to 90 of about 1,029 (198)

Synthesis of a waterproof geopolymer adhesive applied in DUV LEDs packaging

open access: yesCeramics International
This paper presents the synthesis of a waterproof geopolymer based on the modification of silicon phosphate (Si3(PO4)4) that adheres to alumina and quartz glass substrate, which can replace traditional organic polymers for packaging deep-ultraviolet light-emitting diodes.
Qinglei Sun   +6 more
openaire   +2 more sources

Enhanced Self‐Phase Modulation in Silicon Nitride Waveguides Integrated With 2D MoS2 Films

open access: yesAdvanced Materials Technologies, Volume 11, Issue 10, 22 May 2026.
ABSTRACT On‐chip integration of 2D materials provides a promising route toward next‐generation integrated optical devices with performance beyond existing limits. Here, significantly enhanced spectral broadening induced by self‐phase modulation (SPM) is experimentally demonstrated in silicon nitride (Si3N4) waveguides integrated with 2D monolayer ...
Shahaz S. Hameed   +15 more
wiley   +1 more source

Domain engineered gallium oxide phototransistors enabling intelligent ultraviolet vision with dynamic gating

open access: yesInfoMat, Volume 8, Issue 5, May 2026.
Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim   +9 more
wiley   +1 more source

Improvement of p-electrode structures for 280 nm AlGaN LED applications

open access: yes, 2022
An improvement of Ni/Au/p+-GaN p-electrode for AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength of 280 nm is proposed for both p-side-up and flip-chip structures.
Ray-Hua Horng   +5 more
core  

285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

open access: yes, 2023
In this paper, the systematic computational design process of AlGaN-based multiple quantum-well (QW) deep-ultraviolet (DUV) light-emitting diode (LED) grown on sapphire (Al2O3) substrate was investigated.
eroğlu, ESRA   +2 more
core   +1 more source

Realization of Electrically Driven AlGaN-Delta-GaN QW DUV Micro-LEDs at 265 nm

open access: yesIEEE Photonics Journal
Quantum efficiency of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is a roadblock for these devices to reach efficiencies comparable to their visible light counterparts.
Bryan Melanson   +3 more
doaj   +1 more source

Theoretical and Computational Analysis of a Wurtzite-AlGaN DUV-LED to Mitigate Quantum-Confined Stark Effect with a Zincblende Comparison Considering Mg- and Be-Doping. [PDF]

open access: yesNanomaterials (Basel), 2022
Solís-Cisneros HI   +7 more
europepmc   +1 more source

Fusobacterium nucleatumに対する深紫外線発光ダイオード光療法

open access: yes, 2022
【背景】近年、歯周炎や歯肉炎に関連する嫌気性グラム桿菌であるFusobacterium nucleatum (F. nucleatum) は大腸がんの発生や進行に関与することが報告されている。この菌の制御が大腸がんの予防につながる可能性があると考え、深紫外線発光ダイオード (DUV-LED) によるF. nucleatumの殺菌効果を検討した。【方法】DUV-LEDのF.
伊藤, 駿介
core  

Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures

open access: yesNanoscale Research Letters, 2018
The influence of quantum-well (QW) width on electroluminescence properties of AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) was studied at different temperatures.
Shuxin Tan   +6 more
doaj   +1 more source

Enhanced the Optical Power of AlGaN-Based Deep Ultraviolet Light-Emitting Diode by Optimizing Mesa Sidewall Angle

open access: yesIEEE Photonics Journal, 2018
In this work, we propose and optimize the sidewalls for the mesa to enhance the optical power for AlGaN-based deep ultraviolet light-emitting diodes (LEDs). We obtain the mesa with the inclined sidewalls by conducting dry etching. The optical performance
Qian Chen   +8 more
doaj   +1 more source

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