Results 81 to 90 of about 4,806,914 (197)

Metal Oxide Nano‐Interface Boosting the Deep Ultraviolet Adjustable Noise‐Filtering In‐Sensor Computing

Advanced Materials, Volume 38, Issue 56, 8 October 2026.
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju, Peng Li, Jingsong Yuan, Boyuan Yu, Bin Han, Yusheng Chen, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì   +9 more
wiley   +1 more source

Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction

Next Nanotechnology
It is well known that the size of deep ultraviolet (DUV) micro LED (μLEDs) decreases, although bandwidth improves, the optical power drops sharply, severely limiting the application of DUV μLEDs in optical communication.
Yun-Cheng Hsu, Ching-Ho Tien, Yun-Han Chang, Sunanda Mitra, Sankesh Shetty, Sébastien Chenot, Mohamed Al Khalfioui, Hao-Chung Kuo, Chi-Wai Chow, Chia-Yen Huang, Julien Brault, Ray-Hua Horng   +11 more
doaj   +1 more source

Controlled Growth of Boron Nitride in Various Phases

Advanced Materials Interfaces, Volume 13, Issue 19, 6 October 2026.
Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu, Kanghao Xie, Jiajie Qi, Xiaorui Zheng, Kaihui Liu, Xuedong Bai, Li Wang   +6 more
wiley   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, Volume 11, Issue 20, 21 October 2026.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source

Nanostructuration par photolithographie DUV de matériaux organiques

, 2010
L'objectif principal de ce travail de thèse a été de développer un montage de lithographie à 193 nm (Deep-UV, DUV), avec comme but d'obtenir des nanostructures de période l 00 nm sur des surfaces relativement importantes (cm2) dans différents matériaux ...
DIRANI, Ali, SOPPERA, Olivier
core   +2 more sources

Hundred-meter Gb/s deep ultraviolet wireless communications using AlGaN micro-LEDs [PDF]

, 2022
We demonstrate the use of deep ultraviolet (DUV) micro-light-emitting diodes (LEDs) for long-distance line-of-sight optical wireless communications. With a single 285 nm-emitting micro-LED, we have respectively achieved data rates greater than 6.5 Gb/s ...
Gu, Erdan, McKendry, Jonathan J. D., Chen, Cheng, Xie, Enyuan, Maclure, Daniel M., Hill, Jordan, Haas, Harald, Dawson, Martin D., Herrnsdorf, Johannes   +8 more
core   +1 more source

Flexible and Transparent Ga2O3/NiO Photovoltaic Diode for Full‐Wave Rectification in Wearable Optoelectronics

Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
Flexible transparent electronics require efficient power management without sacrificing visibility or mechanical compliance. This work presents a room‐temperature‐fabricated amorphous Ga2O3/NiO heterojunction diode on a flexible substrate that enables full‐wave rectification, UV photovoltaic energy harvesting, and self‐powered photodetection.
Sourov Hossain, Sanh Vo Thi, Md Arifur Rahman Barno, Seunghee Cho, Vivek Mohan More, Malkeshkumar Patel, Kibum Lee, Joondong Kim   +7 more
wiley   +1 more source

High-Performances AlGaN-based DUV-LED via Under-Level Multiple Quantum Well Configuration

Low internal and external quantum efficiencies in high Aluminium content AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED) occurred due to strong polarization effects, spontaneous and piezoelectric polarization, at the interface between two ...
Noorden, Ahmad Fakhrurrazi Ahmad, Kadir, Muhamad Zamzuri Abdul, Aman, Mohammad Amirul Hairol, Azrisham, Nurul Fathinah, Danial, Wan Hazman   +4 more
core   +1 more source

Simultaneous electron confinement and hole tunneling via a 10 nm tunnel junction at the HSL/p-GaN interface for high-efficiency DUV LED

Optical Materials Express
Deep-ultraviolet light-emitting diodes (DUV-LEDs) based on AlGaN alloys are promising for applications in water purification, air sterilization, and portable disinfection.
Xien Sang, Fang Wang, J. Liou, Feng Yun, Yu-Huai Liu   +4 more
semanticscholar   +1 more source

Impacts of Nuclear War on Human Health From Changed Surface Ultraviolet Radiation

Earth's Future, Volume 14, Issue 10, October 2026.
Abstract Climate model simulations indicate that surface ultraviolet (UV) radiation would change after soot injection into the stratosphere during a nuclear war, due to the competing effects of ozone depletion and aerosol attenuation. Using climate model simulations, we evaluate UV impacts under two scenarios: a regional India‐Pakistan conflict ...
Shu Xu, Lili Xia, Alan Robock, Charles Bardeen, Simchan Yook, Sasha Madronich, Soko Setoguchi   +6 more
wiley   +1 more source