Results 31 to 40 of about 24,368 (233)

Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Nanoscale Research Letters, 2019
In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN
Jiamang Che, Hua Shao, Jianquan Kou, Kangkai Tian, Chunshuang Chu, Xu Hou, Yonghui Zhang, Qian Sun, Zi-Hui Zhang   +8 more
doaj   +1 more source

Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer

IEEE Photonics Journal, 2016
Remarkably enhanced light emission efficiency of AlGaN multiple quantum wells (MQWs) was realized by growing on an n-AlGaN underlying layer (UL). The parasitic peaks emitting from inactive regions can be effectively suppressed, and the nonradiative ...
Lei Li, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa   +3 more
doaj   +1 more source

Comparison of the Algan Hemostatic Agent with Floseal in Rat Liver Laceration Bleeding Model

, 2022
Objective: Major vascular injury is one of the most important causes of death after trauma. The effective and speedy control of the hemorrhage is crucial in reducing deaths. Many products are used for this purpose.
Canberk Özbaykuş, Abdullah, Özbaykuş, Abdullah Canberk, Ali Kumandas, Binnetoğlu, Kenan, Ekici, Husamettin, Kumandas, Ali, Kenan Binnetoglu, Husamettin Ekici, Abdullah Canberk Ozbaykus   +8 more
core   +1 more source

Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers

IEEE Photonics Journal, 2013
The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions and AlGaN QW compositions are analyzed. The use of optimized AlGaN-delta-GaN QWs resulted in ~ 7-times increase in material gain over that of conventional ...
Jing Zhang, Nelson Tansu
doaj   +1 more source

Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]

Journal of Applied Physics, 2003
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S, Keller, S, Wu, Y, Speck, J S, DenBaars, S P, Mishra, U K   +5 more
openaire   +2 more sources

Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures

, 2021
This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate ...
Sima Dimitrijev, Faisal Mohd-Yasin, Dimitrijev, Sima, Saad Ullah Rathore, Rathore, Saad Ullah, Mohd-Yasin, Faisal, Amini Moghadam, Hamid, Hamid Amini Moghadam   +7 more
core   +1 more source

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

, 2014
A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper.
Hongling Xiao, Enchao Peng, Cuimei Wang, Peng, EC, Lijuan Jiang, Xiaoliang Wang, Qu, SQ, Chun Feng, Kang, H, He Kang, Wang, ZG, Shenqi Qu, Wang, CM, Yin, HB, Xun Hou, Hou, X, Jiang, LJ, Xiao, HL, Hong Chen, Wang, XL, Feng, C, Chen, H, Haibo Yin, Zhanguo Wang   +23 more
core   +1 more source

Metal Oxide Nano‐Interface Boosting the Deep Ultraviolet Adjustable Noise‐Filtering In‐Sensor Computing

Advanced Materials, EarlyView.
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju, Peng Li, Jingsong Yuan, Boyuan Yu, Bin Han, Yusheng Chen, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì   +9 more
wiley   +1 more source

AlGaN quadruple-band photodetectors [PDF]

2009 IEEE LEOS Annual Meeting Conference Proceedings, 2009
Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.
Gokkavas, Mutlu, Butun, Serkan, Caban, Piotr, Strupinski, Wlodek, Ozbay, Ekmel   +4 more
openaire   +3 more sources

The Time Response of a Uniformly Doped Transmission-Mode NEA AlGaN Photocathode Applied to a Solar-Blind Ultraviolet Detecting System

Photonics
Due to the excellent quantum conversion and spectral response characteristics of the AlGaN photocathode, it has become the most promising III-V group semiconductor photocathode in solar-blind signal photoconversion devices in the ultraviolet band. Herein,
Jinjuan Du, Xiyao Li, Tiantian Jia, Hongjin Qiu, Yang Li, Rui Pu, Quanchao Zhang, Hongchang Cheng, Xin Guo, Jiabin Qiao, Huiyang He   +10 more
doaj   +1 more source