Results 31 to 40 of about 39,461 (213)
Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts
Advances in Electrical and Electronic Engineering, 2016 Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment ...
Jacek Gryglewicz +4 more
doaj +1 more source
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors:Energy level and cross section [PDF]
, 2013 Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT).
Kuball, M., Silvestri, M., Uren, M. J.
core +2 more sources
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019 We have presented the results of terahertz time-domain spectroscopy measurements and a rigorous electrodynamic modeling of the optical characteristics of grating-based AlGaN/GaN plasmonic structures with low-doped two-dimensional electron gas in the ...
V.V. Korotyeyev
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Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
Nanomaterials, 2022 The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN.
Yujie Huang +6 more
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Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas [PDF]
, 2019 In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge
Boone, Derrick +8 more
core +4 more sources
Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices
Journal of Low Power Electronics and Applications, 2021 The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
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Role of inserting an InGaN strain release interlayer in AlGaN growth
Results in Physics, 2023 AlGaN grown on a GaN template usually suffers tensile stress, and the accumulated tensile stress may cause formation of cracks. In this paper, a method to reduce the tensile stress during AlGaN growth by inserting an InGaN interlayer is proposed ...
Zhenzhuo Zhang +5 more
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Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]
, 2014 Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Caesar, Markus +6 more
core +3 more sources
Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
IEEE Journal of the Electron Devices Society, 2020 In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN HEMT
Baoxing Duan +3 more
doaj +1 more source
Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor
, 2023 Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier densities. In contrast to the conventional designs, this Quantum Channel (QC) confinement is controlled
Simin, G., Shur, M.
openaire +2 more sources