Results 31 to 40 of about 3,102 (186)

Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]

Journal of Applied Physics, 2003
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S, Keller, S, Wu, Y, Speck, J S, DenBaars, S P, Mishra, U K   +5 more
openaire   +2 more sources

The Time Response of a Uniformly Doped Transmission-Mode NEA AlGaN Photocathode Applied to a Solar-Blind Ultraviolet Detecting System

Photonics
Due to the excellent quantum conversion and spectral response characteristics of the AlGaN photocathode, it has become the most promising III-V group semiconductor photocathode in solar-blind signal photoconversion devices in the ultraviolet band. Herein,
Jinjuan Du, Xiyao Li, Tiantian Jia, Hongjin Qiu, Yang Li, Rui Pu, Quanchao Zhang, Hongchang Cheng, Xin Guo, Jiabin Qiao, Huiyang He   +10 more
doaj   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Advanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi, Ho Jin Lee, Seok Hee Hong, Jae Seong Park, Chan Ho Ryu, Kyeong Heon Kim, Tukaram D. Dongale, Tae Geun Kim   +7 more
wiley   +1 more source

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer

IEEE Photonics Journal, 2023
AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs,
Hongchang Tao, Shengrui Xu, Yanrong Cao, Huake Su, Yuan Gao, Yachao Zhang, Jincheng Zhang, Yue Hao   +7 more
doaj   +1 more source

Self‐Powered Visible‐Blind Graphene/NiO/ZnO UV‐C Photodiodes

Advanced Optical Materials, EarlyView.
“A scalable architecture for self‐powered UV‐C photodiodes integrates defect‐engineered p‐NiO/n‐ZnO heterojunctions with highly UV‐C transparent graphene anodes. The type‐II band alignment combined with the built‐in electrical field enables robust zero‐bias charge separation.
Umut Kaya, Leon Lörcher, Yasaman Jarrahizadeh, Axel Lorke, Wolfgang Mertin, Gerd Bacher   +5 more
wiley   +1 more source

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Crystals, 2023
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts.
Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano   +11 more
doaj   +1 more source

Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume

Advanced Science, EarlyView.
A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang, Zhen‐Hui Qin, Yi‐Han He, Yun‐Fei Cheng, Hao Yan, Si‐Yuan Yu, Ming‐Hui Lu, Yan‐Feng Chen   +7 more
wiley   +1 more source

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

AIP Advances, 2023
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen   +3 more
doaj   +1 more source

Intrinsic Dual‐Phase Regulated GeSe2 Nanoparticles Triggered by Ball‐Milling Treatment for Photonic Multi‐Valued Logic Circuits

Advanced Science, EarlyView.
We report the solid‐state ball milling, a traditional, reliable, mass‐productive material processing, to prepare the air‐stable and dual‐phase GeSe2‐x nanoparticles with extended photodetection feasibility toward optical‐wavelength regions. We further display photonic multi‐valued logic (MVL) circuit through the employment of a hybrid PMMA/GeSe2‐x ...
An‐Ting Tsai, Chun‐Jen Wang, Pin‐Chao Liao, Chin Shan Lue, Chia‐Nung Kuo, Le Vo Phuong Thuan, Po‐Hsuan Hsiao, Chang‐Hyun Kim, Chia‐Yun Chen   +8 more
wiley   +1 more source

Selective Photosensitive Structures Based On Au-Algan Schottky Barrier

Известия высших учебных заведений России: Радиоэлектроника, 2016
Created and studied selective photosensitive structures based on Au-AlGaN Schottky barrier for the ultraviolet range of the spectrum. The methods of spectrum management photosensitivity by the use of the wide windows and the effects of over-barrier ...
A. S. Evseenkov, I. A. Lamkin, I. I. Mikhailov, A. V. Solomonov, S. A. Tarasov   +4 more
doaj