Results 31 to 40 of about 26,376 (228)

Insights Into the Two-Dimensional MoS₂ Grown on AlGaN(GaN) Substrates by CVD Method

IEEE Photonics Journal, 2021
Two-dimensional (2D) MoS2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS2-AlGaN(GaN) heterostructures were formed. The MoS2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers,
Guofeng Yang, Yu Ding, Naiyan Lu, Feng Xie, Yan Gu, Bingjie Ye, Yufei Yao, Xiumei Zhang, Xinxia Huo   +8 more
doaj   +1 more source

Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Nanoscale Research Letters, 2019
In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN
Jiamang Che, Hua Shao, Jianquan Kou, Kangkai Tian, Chunshuang Chu, Xu Hou, Yonghui Zhang, Qian Sun, Zi-Hui Zhang   +8 more
doaj   +1 more source

Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures

, 2021
This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate ...
Sima Dimitrijev, Faisal Mohd-Yasin, Dimitrijev, Sima, Saad Ullah Rathore, Rathore, Saad Ullah, Mohd-Yasin, Faisal, Amini Moghadam, Hamid, Hamid Amini Moghadam   +7 more
core   +1 more source

Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer

IEEE Photonics Journal, 2016
Remarkably enhanced light emission efficiency of AlGaN multiple quantum wells (MQWs) was realized by growing on an n-AlGaN underlying layer (UL). The parasitic peaks emitting from inactive regions can be effectively suppressed, and the nonradiative ...
Lei Li, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa   +3 more
doaj   +1 more source

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Scientific Reports, 2017
A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure
Feng-Hsu Fan, Zun-Yao Syu, Chia-Jung Wu, Zhong-Jie Yang, Bo-Song Huang, Guan-Jhong Wang, Yung-Sen Lin, Hsiang Chen, Chyuan Hauer Kao, Chia-Feng Lin   +9 more
doaj   +1 more source

Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers

IEEE Photonics Journal, 2013
The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions and AlGaN QW compositions are analyzed. The use of optimized AlGaN-delta-GaN QWs resulted in ~ 7-times increase in material gain over that of conventional ...
Jing Zhang, Nelson Tansu
doaj   +1 more source

Postoperative Hypocalcemia Following Total Thyroidectomy Versus Completion Thyroidectomy. [PDF]

Laryngoscope
Completion thyroidectomy performed with at least a three‐month interval demonstrates superior parathyroid preservation compared to primary total thyroidectomy, as evidenced by significantly higher postoperative parathyroid hormone levels (51.90 ± 30.26 pg/mL vs. 30.90 ± 17.10 pg/mL, p = 0.006).
Cicek MT, Koca ÇF, Tan M, Algan B.
europepmc   +2 more sources

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

, 2014
A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper.
Hongling Xiao, Enchao Peng, Cuimei Wang, Peng, EC, Lijuan Jiang, Xiaoliang Wang, Qu, SQ, Chun Feng, Kang, H, He Kang, Wang, ZG, Shenqi Qu, Wang, CM, Yin, HB, Xun Hou, Hou, X, Jiang, LJ, Xiao, HL, Hong Chen, Wang, XL, Feng, C, Chen, H, Haibo Yin, Zhanguo Wang   +23 more
core   +1 more source

Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors [PDF]

, 2012
UV and deep-UV emitters based on AlGaN/AlN heterostructures are very inefficient due to the high lattice mismatch of these films with sapphire substrates, leading to high dislocation densities.
Rio Tse-yang Chang
core   +2 more sources

AlGaN quadruple-band photodetectors [PDF]

2009 IEEE LEOS Annual Meeting Conference Proceedings, 2009
Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.
Gokkavas, Mutlu, Butun, Serkan, Caban, Piotr, Strupinski, Wlodek, Ozbay, Ekmel   +4 more
openaire   +3 more sources