Results 21 to 30 of about 39,461 (213)
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
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AlGaN quadruple-band photodetectors [PDF]
2009 IEEE LEOS Annual Meeting Conference Proceedings, 2009 Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.
Gokkavas, Mutlu +4 more
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Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors [PDF]
, 2014 The evolution of AlGaN/GaN high electron-mobility transistors under off-state stress conditions is studied by gate leakage current (Ig) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature.
Kuball, Martin H H +3 more
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Graphene/AlGaN/GaN RF Switch [PDF]
Micromachines, 2021 RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and ...
Yevhen Yashchyshyn +10 more
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Effect of the back contact work function on the performance of Al0.1Ga0.9N/CdS/Si solar cell [PDF]
مجلة جامعة الانبار للعلوم الصرفةIn the first phase of this study, a layer of cadmium sulphide (CdS) and a layer of aluminium gallium nitride (Al0.1GaN0.9) was deposited on a silicon substrate (10% AlN with 70% GaN) was deposited on a silicon substrate by using a pulse laser deposition ...
Bashar Saleh
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Effect of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability [PDF]
, 2012 The effect of gate shape and its necessary fabrication process on the reliability of AlGaN/GaN high electron mobility transistors (HEMT) was studied on devices fabricated on the same wafer, using DC and pulsed HEMT analysis.
Arehart +24 more
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High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [PDF]
Nanoscale Research Letters, 2014 In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a ...
Lee, Ya-Ju +7 more
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Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
Cumhuriyet Science Journal, 2018 In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
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Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]
, 2016 status ...
Decoutere, S. +10 more
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Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
Crystals, 2023 This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN
Yusnizam Yusuf +8 more
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