Results 21 to 30 of about 3,102 (186)
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [PDF]
Nanoscale Research Letters, 2014 In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a ...
Lee, Ya-Ju +7 more
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Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
IEEE Journal of the Electron Devices Society, 2020 In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN HEMT
Baoxing Duan +3 more
doaj +1 more source
Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
Scientific Reports, 2017 A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure
Feng-Hsu Fan +9 more
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IEEE Photonics Journal, 2021 Herein, we investigate the influence of an AlGaN metasurface on AlGaN-based deep-ultraviolet light-emitting diodes' light-extraction efficiency by utilizing the 3D finite-difference time-domain method.
Joosun Yun, Hideki Hirayama
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Nanoscale Research Letters, 2019 In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN
Jiamang Che +8 more
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Insights Into the Two-Dimensional MoS2 Grown on AlGaN(GaN) Substrates by CVD Method
IEEE Photonics Journal, 2021 Two-dimensional (2D) MoS2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS2-AlGaN(GaN) heterostructures were formed. The MoS2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers,
Guofeng Yang +8 more
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IEEE Photonics Journal, 2016 Remarkably enhanced light emission efficiency of AlGaN multiple quantum wells (MQWs) was realized by growing on an n-AlGaN underlying layer (UL). The parasitic peaks emitting from inactive regions can be effectively suppressed, and the nonradiative ...
Lei Li +3 more
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Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers
IEEE Photonics Journal, 2013 The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions and AlGaN QW compositions are analyzed. The use of optimized AlGaN-delta-GaN QWs resulted in ~ 7-times increase in material gain over that of conventional ...
Jing Zhang, Nelson Tansu
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AlGaN quadruple-band photodetectors [PDF]
2009 IEEE LEOS Annual Meeting Conference Proceedings, 2009 Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.
Gokkavas, Mutlu +4 more
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Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source