Results 21 to 30 of about 24,368 (233)
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019 We have presented the results of terahertz time-domain spectroscopy measurements and a rigorous electrodynamic modeling of the optical characteristics of grating-based AlGaN/GaN plasmonic structures with low-doped two-dimensional electron gas in the ...
V.V. Korotyeyev
doaj +1 more source
Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
Nanomaterials, 2022 The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN.
Yujie Huang +6 more
doaj +1 more source
Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al_2O_3 or AlTiO gate dielectrics [PDF]
, 2018 We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al_2O_3 or AlTiO (an alloy of Al_2O_3 and TiO_2) gate dielectrics obtained by atomic layer deposition on AlGaN.
Toshi-kazu, Suzuki, +8 more
core +1 more source
IEEE Photonics Journal, 2021 Herein, we investigate the influence of an AlGaN metasurface on AlGaN-based deep-ultraviolet light-emitting diodes' light-extraction efficiency by utilizing the 3D finite-difference time-domain method.
Joosun Yun, Hideki Hirayama
doaj +1 more source
Insights Into the Two-Dimensional MoS2 Grown on AlGaN(GaN) Substrates by CVD Method
IEEE Photonics Journal, 2021 Two-dimensional (2D) MoS2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS2-AlGaN(GaN) heterostructures were formed. The MoS2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers,
Guofeng Yang +8 more
doaj +1 more source
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [PDF]
Nanoscale Research Letters, 2014 In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a ...
Lee, Ya-Ju +7 more
openaire +3 more sources
Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
IEEE Journal of the Electron Devices Society, 2020 In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN HEMT
Baoxing Duan +3 more
doaj +1 more source
Role of inserting an InGaN strain release interlayer in AlGaN growth
Results in Physics, 2023 AlGaN grown on a GaN template usually suffers tensile stress, and the accumulated tensile stress may cause formation of cracks. In this paper, a method to reduce the tensile stress during AlGaN growth by inserting an InGaN interlayer is proposed ...
Zhenzhuo Zhang +5 more
doaj +1 more source
Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
Scientific Reports, 2017 A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure
Feng-Hsu Fan +9 more
doaj +1 more source
Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors [PDF]
, 2012 UV and deep-UV emitters based on AlGaN/AlN heterostructures are very inefficient due to the high lattice mismatch of these films with sapphire substrates, leading to high dislocation densities.
Rio Tse-yang Chang
core +2 more sources